Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China(Grant No.2013ZX02303)
TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor (MOSFET) is grown by the atorr/ic layer deposition method using TiCI4 and AI(CH3) 3 (TMA) as precursors. It is found that the major PrOd...
supported by the National Natural Science Foundation of China (21076108);the National Basic Research Program of China (2011CB935902);MOE Innovation Team (IRT0927);Tianjin High-Tech (10ZCGHHZ01200 & 10SYSYJC27600)
We report on the preparation of spinel Li4Ti5O12 submicrospheres and their application as anode materials of rechargeable lithium-ion batteries. The spinel Li4Ti5O12 submicrospheres are synthesized with three steps of...