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TRAPPING: 作品数：422被引量：528H指数：8; 导出分析报告; 相关领域：理学机械工程更多>>; 相关作者：夏飞马晓初江俊刘顺英胡文浩更多>>; 相关机构：中国科学院浙江大学云南大学华东师范大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划广东省自然科学基金中国博士后科学基金更多>>

Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs被引量：1: 《Journal of Semiconductors》2022年第3期74-77,共4页Lan Bi Yixu Yao Qimeng Jiang Sen Huang Xinhua Wang Hao Jin Xinyue Dai Zhengyuan Xu Jie Fan Haibo Yin Ke Wei Xinyu Liu; the National Natural Science Foundation of China under Grant 61822407,Grant 61527816,Grant 11634002,Grant 61631021,Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)under Grant QYZDB-SSW-JSC012;in part by the Youth Innovation Promotion Association of CAS;in part by the University of CAS;the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS.; Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching mea...; 关键词：AlGaN/GaN MIS-HEMTs enhancement-mode T-shape gate parasitic capacitance trapping/de-trapping capacitancevoltage hysteresis

2D study of AlGaN/AlN/GaN/AlGaN HEMTs' response to traps被引量：2: 《Journal of Semiconductors》2019年第2期43-48,共6页A.Hezabra N.A.Abdeslam N.Sengouga M.C.E.Yagoub; In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u...; 关键词：ALGAN HEMT ALGAN/ALN/GAN structure silicon SUBSTRATE Silvaco TRAPPING effects channel TRAPS

Coeffect of trapping behaviors on the performance of GaN-based devices被引量：2: 《Journal of Semiconductors》2018年第9期50-54,共5页Xingye Zhou Xin Tan Yuangang Wang Xubo Song Peng Xu Guodong Gu Yuanjie Lü Zhihong Feng; supported by the National Natural Science Foundation of China(Nos.61604137,61674130); Trap-induced current collapse has become one of the critical issues hindering the improvement of Ga Nbased microwave power devices. It is difficult to study the behavior of each trapping effect separately with the exp...; 关键词：GaN-based HEMT device physics trapping effect transient simulation

Studies of Water V. Five Phonons in Protonic Semiconductor Lattice Model of Pure Liquid Water: 《Journal of Semiconductors》2017年第7期1-17,共17页Binbin Jie Chihtang Sah; supported by Xiamen University, Fujian, China; We report physics based confirmation（~1% RMS deviation）, by existing experimental data, of protonprohol（proton-hole） ion product（p H） and mobilities in pure liquid water（0-100℃, 1-atm pressure） anticipated fr...; 关键词：solid soft and liquid material physics pure water point-mass positive proton and negative prohol pH proton-ion product and mobilities phonon scattering and detrapping-trapping of propagating-localized protons and prohols

MOS Capacitance-Voltage Characteristics:V.Methods to Enhance the Trapping Capacitance: 《Journal of Semiconductors》2012年第2期1-9,共9页Jie Binbin Sah Chihtang; supported by the Xiamen University,China,and the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah; Low-frequency and High-frequency Capacitance-Voltage（C-V） curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -tr...; 关键词：MOS silicon trapping capacitance dopant impurities DONORS ACCEPTORS

MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities: 《Journal of Semiconductors》2012年第1期1-19,共19页Jie Binbin Sah Chihtang; Supported by the Xiamen University,China,and the CISAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah; Metal-Oxide-Semiconductor Capacitance-Voltage （MOSCV） characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p- doped an...; 关键词：multiple charge states trapping capacitance dopant impurity

MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations被引量：1: 《Journal of Semiconductors》2011年第12期1-11,共11页揭斌斌薩支唐; supported by Xiamen University,China;the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah; Low-frequency and high-frequency Capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to...; 关键词：trapping capacitance donor dopant impurity electron trap MOS

MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities: 《Journal of Semiconductors》2011年第12期12-27,共16页揭斌斌薩支唐; supported by Xiamen University,China;the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah; Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-s...; 关键词：MOS silicon trapping capacitance dopant impurities donors ACCEPTORS

MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity: 《Journal of Semiconductors》2011年第4期1-9,共9页揭斌斌薩支唐; supported by the CTSAH Associates(CTSA);founded by the late Linda Su-Nan Chang Sah;the Xiamen University,China; The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included...; 关键词：MOS capacitance trapping capacitance impurity deionization SPINTRONICS

A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks: 《Journal of Semiconductors》2009年第8期63-66,共4页何进马晨月张立宁张健张兴; supported by the Special Funds for the State Key Development Program for Basic Research of China;the National Natural Science Foundation of China (No.60876027); A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall （SRH） statistics to account for the transient charging effects in a MOSFET high-k gate stack. Star...; 关键词：high-k gate stack nanoscale MOSFETs interface trap and charges trapping and detrapping threshold voltage dynamic behavior compact modeling

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