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TUNNEL: 作品数：890被引量：1951H指数：16; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：张照煌利奕年唐灯平刘东民杨其新更多>>; 相关机构：上海隧道工程股份有限公司东南大学同济大学上海交通大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金北京市自然科学基金更多>>

The exchange interaction between neighboring quantum dots:physics and applications in quantum information processing: 《Journal of Semiconductors》2024年第10期20-34,共15页Zheng Zhou Yixin Li Zhiyuan Wu Xinping Ma Shichang Fan Shaoyun Huang; funded by National Natural Science Foundation of China,(Grant Nos.11974030 and 92165208)。; Electron spins confined in semiconductor quantum dots(QDs)are one of potential candidates for physical implementation of scalable quantum information processing technologies.Tunnel coupling based inter exchange intera...; 关键词：exchange interaction quantum dots tunnel coupling quantum computation

Improvement of tunnel compensated quantum well infrared detector被引量：2: 《Journal of Semiconductors》2019年第12期142-145,共4页Chaohui Li Jun Deng Weiye Sun Leilei He Jianjun Li Jun Han Yanli Shi; supported by Beijing Natural Science Foundation (No. 4182011);the Development Foundation for Optoelectronics Technology Lab, Ministry of Education (No. PXM 2018_014204_500020);National Natural Science Foundation of China (No. 61751502); To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector(QWIP)with tunnel compensation structure,an improved structure is proposed.In the new structure,the superlattices are locat...; 关键词：infrared detector tunnel compensation SUPERLATTICE

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation: 《Journal of Semiconductors》2019年第6期43-47,共5页Endi Suhendi Lilik Hasanah Dadi Rusdiana Fatimah A. Noor Neny Kurniasih Khairurrijal; supported by Hibah Penelitian Berbasi Kompetensi 2018 RISTEKDIKTI Republic of Indonesia; The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like...; 关键词：graphene nanoribbon tunnel field effect transistor tunneling current Schrodinger equation Dirac-like equation

A novel design approach of charge plasma tunnel FET for radio frequency applications: 《Journal of Semiconductors》2019年第5期77-83,共7页Shivendra Yadav Alish Pamnani Dheeraj Sharma Anju Gedam Atul Kumar Neeraj Sharma; In this paper, the impact of extra electron source(EES) and dual metal gate engineering on conventional charge plasma TFET(CP-TFET) have been done for improving DC and analog/RF parameters. CP-TFET structure is upgrad...; 关键词：AMBIPOLAR current CHARGE PLASMA EES and dual metal gate engineering

Two dimensional analytical model for a negative capacitance double gate tunnel field effect transistor with ferroelectric gate dielectric被引量：1: 《Journal of Semiconductors》2018年第10期39-45,共7页Huifang Xu; Project supported by the University Natural Science Research Key Project of Anhui Province(No.KJ2017A502);the Talents Project of Anhui Science and Technology University(No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities(No.gxyq2018048); Analytical models are presented for a negative capacitance double-gate tunnel field-effect transistor（NC DG TFET） with a ferroelectric gate dielectric in this paper. The model accurately calculates the channel poten...; 关键词：ferroelectric gate dielectric double-gate tunnel field-effect transistor analytical model

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement: 《Journal of Semiconductors》2018年第5期30-40,共11页S.Poorvasha B.Lakshmi; Project supported by the Department of Science and Technology,Government of India under SERB Scheme(No.SERB/F/2660); In this paper,RF performance analysis of In As-based double gate（DG）tunnel field effect transistors（TFETs）is investigated in both qualitative and quantitative fashion.This investigation is carried out by varying t...; 关键词：double gate tunnel FETs gate-drain overlap unity gain cut-off frequency maximum oscillation frequency Y-parameters modeling

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry: 《Journal of Semiconductors》2017年第7期64-70,共7页S.K.Vishvakarma Ankur Beohar Vikas Vijayvargiya Priyal Trivedi; supported by the Council of Scientific and Industrial Research(CSIR)Funded Research Project,Grant No.22/0651/14/EMR-II,Government of India; In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor（TFET） has been made using distinct device geometry. Firstly, performance parameters of GAATFET are...; 关键词：tunnel field effect transistor cutoff frequency maximum oscillation frequency and gate all around

Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications: 《Journal of Semiconductors》2017年第5期42-48,共7页Yogesh Goswami Pranav Asthana Bahniman Ghosh; A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor（SG-JLTFET） has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped chann...; 关键词：single gate junctionless tunnel field effect transistor （SG JL-TFET） gallium antimonide band-to-band tunnelling sub-threshold slope （SS）

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers: 《Journal of Semiconductors》2017年第2期51-58,共8页Huifang Xu Yuehua Dai; Project supported by the National Natural Science Foundation of China(No.61376106);the University Natural Science Research Key Project of Anhui Province(No.KJ2016A169);the Introduced Talents Project of Anhui Science and Technology University; A two-dimensional analytical model of double-gate（DG） tunneling field-effect transistors（TFETs） with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potentia...; 关键词：double-gate tunnel field effect transistor（TFET） interface trapped charges analytical model

Vertical-dual-source tunnel FETs with steeper subthreshold swing: 《Journal of Semiconductors》2016年第9期69-75,共7页蒋智庄奕琪李聪王萍刘予琪; Project supported by the National Natural Science Foundation of China(Nos.61204092,61574109); In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel l...; 关键词：dual source regions and U-shape-gate tunneling field-effect transistor subthreshold swing band-toband tunneling on-state current

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