supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003);the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335);the Project(No.9140C140101140C14069);the Innovation Project of GUET Graduate Education(No.YJCXS201529);the National Science&Technology Major Project of China(No.2011ZX02708-003)
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...