Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400603);the National Natural Science Foundation of China(Grant No.61335004)
Silver nanowire(AgNW) networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide(ITO) and have been proposed to replace ITO, which is currently w...
Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400603);the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)
We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RL...
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121);the National Basic Research Program of China (Grant No. 2006CB604900)
We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes (LEDs) onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective ...
Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121);the National Basic Research Program of China(Grant No.2006CB604900)
The reasons for low output power of AlGalnP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall...
supported by the Natural Science Foundation of Beijing,China (Grant No.4092007);the National High Technology Research and Development Program of China (Grant No.2008AA03Z402);the Doctoral Program Foundation of Beijing,China(Grant No.X0002013200801);the Seventh BJUT Technology Fund for postgraduate students,China
In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results sh...
In this paper a novel A1GalnP thin-film light-emitting diode (LED) with omni-directionally reflector (ODR) and transparent conducting indium tin oxide (ITO) n-type contact structure is proposed, and fabrication ...