ALGAINP

作品数:115被引量:162H指数:6
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相关作者:沈光地陈良惠马骁宇范广涵梁静秋更多>>
相关机构:山东浪潮华光光电子股份有限公司北京工业大学山东华光光电子股份有限公司中国科学院更多>>
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相关基金:国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划北京市自然科学基金更多>>
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Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires
《Chinese Physics B》2018年第9期620-625,共6页Xia Guo Qiao-Li Li Chong Li An-Qi Hu Hui-Jun Tian Chun-Wei Guo Xiao-Ying He Hua Wu 
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400603);the National Natural Science Foundation of China(Grant No.61335004)
Silver nanowire(AgNW) networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide(ITO) and have been proposed to replace ITO, which is currently w...
关键词:surface plasmon current spreading silver nanowire light-emitting diode 
Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
《Chinese Physics B》2018年第4期491-496,共6页Bin Zhao Wei Hu Xian-Sheng Tang Wen-Xue Huo Li-Li Han Ming-Long Zhao Zi-Guang Ma Wen-Xin Wang Hai-Qiang Jia Hong Chen 
Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400603);the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)
We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RL...
关键词:light emitting diodes thin film ELECTROPLATING substrate transferred process 
AlGaInP-Si glue bonded high performance light emitting diodes被引量:1
《Chinese Physics B》2011年第8期354-357,共4页陈依新 沈光地 郭伟玲 高志远 
Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121);the National Basic Research Program of China (Grant No. 2006CB604900)
We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes (LEDs) onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective ...
关键词:glue agglutinated AlGaInP LEDs Si substrate luminous intensity 
Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)被引量:3
《Chinese Physics B》2011年第1期562-565,共4页陈依新 沈光地 郭伟玲 徐晨 李建军 
Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121);the National Basic Research Program of China(Grant No.2006CB604900)
The reasons for low output power of AlGalnP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall...
关键词:AlGaInP light emitting diodes internal quantum efficiency HEAT light power 
Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes
《Chinese Physics B》2010年第9期559-563,共5页李春伟 朱彦旭 沈光地 张勇辉 秦园 高伟 蒋文静 邹德恕 
supported by the Natural Science Foundation of Beijing,China (Grant No.4092007);the National High Technology Research and Development Program of China (Grant No.2008AA03Z402);the Doctoral Program Foundation of Beijing,China(Grant No.X0002013200801);the Seventh BJUT Technology Fund for postgraduate students,China
In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results sh...
关键词:Ohmic contact TUNNELING light emitting diode Zn/Au-ITO/Zn 
AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact
《Chinese Physics B》2007年第11期3498-3501,共4页张剑铭 邹德恕 徐晨 郭伟玲 朱彦旭 梁庭 达小丽 李建军 沈光地 
In this paper a novel A1GalnP thin-film light-emitting diode (LED) with omni-directionally reflector (ODR) and transparent conducting indium tin oxide (ITO) n-type contact structure is proposed, and fabrication ...
关键词:ALGAINP thin-film LED Omni-directional reflector ITO 
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