BUFFER_LAYER

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Proposal and Achievement of a Relatively Al-rich Interlayer for In-rich Al_x In_(1-x)N Films Deposition
《Journal of Wuhan University of Technology(Materials Science)》2013年第5期868-875,共8页吕默 DONG Chengjun 王一丁 
Supported by the 863 High-Technology Research and Development Program of China(No.2009AA03Z442);the National Natural Science Foundation of China(No.61077074);the Science and Technology Department of Jilin Province(No.20090422)
Ternary In-rich AlxIn1-x N films were successfully grown on Si （111） and （0001） sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich AlxIn1-x N layer after AlN buffer. X-ray diffract...
关键词：AlxIn1-x N film magnetron sputtering buffer layer microstructure 
Growth and Characterization of Doped CeO_2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method
《Journal of Wuhan University of Technology(Materials Science)》2012年第3期471-476,共6页王耀 卢亚锋 
Funded by the National Natural Science Foundation of China;National 863 Program of China(Nos.50872115and2009AA03Z203)
CeO2 and Ce0.8M0.2O2-d films （M = Mn, Y, Gd, Sm, Nd and La） with （00l） preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition （MOD） method. The factors infl...
关键词：coated conductors buffer layer metal organic deposition 
Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures
《Journal of Wuhan University of Technology(Materials Science)》2011年第5期888-890,共3页李凌 王传彬 
Funded by the International Science and Technology Cooperation Project (No.2009DFB50470);the National Nature Science Foundation of China (No.50802071);International Science and Technology Cooperation Project of Hubei Province (No.2010BFA017)
MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxid...
关键词：MgO films buffer layer laser ablation substrate temperature 
Optical, Mechanical and Laser-induced Damage Threshold Properties of 1064 nm, 532 nm Frequency-doubled Antireflection Coating for LBO
《Journal of Wuhan University of Technology(Materials Science)》2011年第4期687-689,共3页谭天亚 
Funded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province (20081030)
1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium...
关键词：frequency-doubled AR coating LBO ADHESION LIDT buffer layer 
Employing SiO_2 Buffer Layer to Improve Adhesion of the Frequency-doubled Antireflection Coating on LBO
《Journal of Wuhan University of Technology(Materials Science)》2009年第6期849-851,共3页谭天亚 
Fundeded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province(20081030);S&T Plan Project of the Educational Department of Liaoning Province(2008224)
Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with th...
关键词：frequency-doubled antireflection coating LBO crystal ADHESION 
Microstructure and AMR Properties of Permalloy Films Sputtered on (Ni_ (0.81)Fe_(0.19)_ (0.66)Cr_(0.34 )Buffer
《Journal of Wuhan University of Technology(Materials Science)》2004年第1期23-25,共3页杨晓非 
FundedbytheNaturalScienceFoundationofHubeiProvince(No .2 0 0 2AB0 32 )
Ni 0.81Fe 0.19) 0.66Cr 0.34 has a high resistivity and a crystal structure close to that of Ni 0.81Fe 0.19.The electrical and X-ray diffraction measurements prove that a thin NiFeCr seed layer induce...
关键词：permalloy film AMR buffer layer 
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