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BUFFER_LAYER: 作品数：373被引量：330H指数：6; 导出分析报告; 相关作者：于军胜赵正平陈昊李亮蔡树军更多>>; 相关机构：电子科技大学清华大学河北半导体研究所中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells被引量：2: 《Journal of Semiconductors》2022年第5期89-103,共15页Bingbing Chen Pengyang Wang Ningyu Ren Renjie Li Ying Zhao Xiaodan Zhang; the supports from National Key Research and Development Program of China(Grant No.2018YFB1500103);the Overseas Expertise Introduction Project for Discipline Innovation of Higher Education of China(Grant No.B16027);Tianjin Science and Technology Project(Grant No.18ZXJMTG00220);the Fundamental Research Funds for the Central Universities,Nankai University(Grant Nos.63191736,ZB19500204);Natural Science Foundation of Tianjin(No.20JCQNJC02070);China Postdoctoral Scie nce Foundation(No.2020T130317)。; Inverted perovskite solar cells(IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long...; 关键词：atomic layer deposition tin dioxide additional buffer layer efficiency and stability inverted perovskite solar cells

Enhancement of photoelectrochemical performance in ferroelectric films via the introduction of an Au buffer layer被引量：2: 《Journal of Semiconductors》2021年第11期61-69,共9页Dawei Cao Ming Li Jianfei Zhu Yanfang He Tong Chen Yuan Liu Mingming Chen Ying Yang; This work was supported by National Natural Science Foundation of China(Grant No.51702130);the Innovation/Entrepreneurship Program of Jiangsu Province and the project of Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices(No.SS2018001)。; The inefficient separation of photogenerated carriers has become a serious problem that limits the photoelectrochemical(PEC)performance of semiconductors.Herein,a sol-gel method was used to prepare BiFeO_(3) ferroelec...; 关键词：PHOTOELECTROCHEMICAL BIFEO3 ferroelectric films charge separation

First-principles study of the growth and diffusion of B and N atoms on the sapphire surface with h-BN as the buffer layer被引量：1: 《Journal of Semiconductors》2021年第8期66-72,共7页Jianyun Zhao Xu Li Ting Liu Yong Lu Jicai Zhang; partly supported by the National Natural Science Foundation of China(61874007,12074028);the Beijing Municipal Natural Science Foundation(4182046);Shandong Provincial Major Scientific and Technological Innovation Project(2019JZZY010209);Key-area research and the development program of Guangdong Province(2020B010172001);the Fundamental Research Funds for the Central Universities(buctrc201802,buctrc201830,buctrc202127)。; Currently,the preparation of large-size and high-quality hexagonal boron nitride is still an urgent problem.In this study,we investigated the growth and diffusion of boron and nitrogen atoms on the sapphire/h-BN buffe...; 关键词：hexagonal boron nitride buffer layer first-principles calculations molecular dynamics

Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering被引量：2: 《Journal of Semiconductors》2018年第12期26-31,共6页C.M.Samba Vall M.Chaik H.Ait Dads H.El Aakib M.Elyaagoubi M.Aggour A.Outzourhit; Zinc sulphide(ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency(RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at75 min....; 关键词：ZnS thin films by sputtered RF-sputtering ZnS ZnS buffer layer for solar cell

Theoretical simulation of performances in CIGS thin-film solar cells with cadmiumfree buffer layer: 《Journal of Semiconductors》2017年第8期49-54,共6页Kang Luo Yulin Sun Liyu Zhou Fang Wang Fang Wu; supported by the NSF of Jiangsu Province(No.BK.20131420);the Postgraduate Innovation Project of Jiangsu Province(No.KYLX15_0926);the NJFU Outstanding Young Scholars Funding; Copper indium gallium selenium （CIGS） thin film solar cells have become one of the hottest topics in solar energy due to their high photoelectric transformation efficiency. To real applications, CIGS thin film is co...; 关键词：solar cells hetero junction structure cadmium-free buffer layer

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes: 《Journal of Semiconductors》2017年第4期1-5,共5页Xiaohui Yi Zhiwei Huang Guangyang Lin Cheng Li Songyan Chen Wei Huang Jun Li Jianyuan Wang; Project supported by the Key Project of Natural Science Foundation of China(No.61534005);the National Science Foundation of China(No.61474081);the National Basic Research Program of China(No.2013CB632103);the Natural Science Foundation of Fujian Province(No.2015D020);the Science and Technology Project of Xiamen City(No.3502Z20154091); The influence of defects in low temperature Ge layer on electrical characteristics of p-Ge/i-Ge/n-Si and n-Ge/i-Ge/p-Ge photodiodes（PDs） was studied.Due to a two-step growth method,there are high defect densities in...; 关键词：germanium photodiodes defects dark current simulation

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET被引量：3: 《Journal of Semiconductors》2016年第2期90-93,共4页贾云鹏苏洪源金锐胡冬青吴郁; supported by the National Natural Science Foundation of China(No.61176071);the Doctoral Fund of Ministry of Education of China(No.20111103120016);the Science and Technology Program of State Grid Corporation of China(No.SGRI-WD-71-13-006); The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed...; 关键词：single event burnout （SEB） quasi-static avalanche linear doping buffer layer heavy ion Au beam

ZnS thin films deposition by thermal evaporation for photovoltaic applications被引量：2: 《Journal of Semiconductors》2015年第10期41-44,共4页K.Benyahia A.Benhaya M.S.Aida; ZnS thin films were deposited on glass substrates by thermal evaporation from millimetric crystals of ZnS. The structural, compositional and optical properties of the films are studied by X-ray diffraction, SEM micros...; 关键词：ZNS thin films thermal evaporation buffer layer antireflection coating

Ambipolar organic heterojunction transistors based on F_(16)CuPc/CuPc with a MoO_3 buffer layer: 《Journal of Semiconductors》2015年第10期49-54,共6页仪明东张宁解令海黄维; Project supported by the National Natural Science Foundation of China(Nos.61475074,61204095); We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, r...; 关键词：organic field-effect transistors HETEROJUNCTION AMBIPOLAR contact resistance

An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications: 《Journal of Semiconductors》2015年第10期60-64,共5页党焕芹吴晓明孙小卫邹润秋章若川印寿根; Project supported by the National Natural Science Foundation of China(No.60676051);the National High Technology Research and Development Program of China(No.2013A A014201);the Scientific Developing Foundation of Tianjin Education Commission(No.2011ZD02);the Key Science and Technology Support Program of Tianjin(No.14ZCZDGX00006);the Foundation of Key Discipline of Material Physics and Chemistry of Tianjin; We report an effective method to improve the performance of p-type copper phthalocyanine （CuPc） based organic field-effect transistors （OFETs） by employing a thin para-quaterphenyl （p-4p） film and simultane- ous...; 关键词：organic field-effect transistors copper phthalocyanine active layer para-quaterphenyl buffer layer source/drain contact modifications

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