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DEVICES: 作品数：1024被引量：1159H指数：13; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：徐志汉张英男梁仁荣周卫李贻昆更多>>; 相关机构：美国ADI集团公司中国汽车技术研究中心清华大学国家电网公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Gate-Tunable Negative Differential Conductance in Hybrid Semiconductor–Superconductor Devices: 《Chinese Physics Letters》2023年第6期50-55,共6页刘明黎潘东乐天贺江波贾仲谋朱尚杨光吕昭征刘广同沈洁赵建华吕力屈凡明; the National Key Research and Development Program of China(Grant Nos.2022YFA1403400 and 2017YFA0304700);the National Natural Science Foundation of China(Grant Nos.12074417,92065203,92065106,61974138,11774405,11527806,and 12104489);the Strategic Priority Research Program B of Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB33000000);the Synergetic Extreme Condition User Facility sponsored by the National Development and Reform Commission;the Innovation Program for Quantum Science and Technology(2021ZD0302600);the support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043).; Negative differential conductance(NDC)serves as a crucial characteristic that reveals various underlying physics and transport process in hybrid superconducting devices.We report the observation of gate-tunable NDC ou...; 关键词：SUPERCONDUCTOR TRANSPORT eventually

Electronic Transport Properties of Diblock Co-Oligomer Molecule Devices Sandwiched between Nitrogen Doping Armchair Graphene Nanoribbon Electrodes: 《Chinese Physics Letters》2017年第11期71-74,共4页叶萌夏蔡娟杨爱云张博群苏耀恒涂喆研马越; Supported by the National Natural Science Foundation of China under Grant Nos 11504283 and 21503153;the Natural Science Foundation of Shaanxi Province under Grant No 2014JM1025;the Science and Technology Star Project of Shaanxi Province under Grant No 2016KJXX-45; We investigate the electronic transport properties of dipyrimidinyl-diphenyl sandwiched between two armchair graphene nanoribbon electrodes using the nonequilibrium Green function formalism combined with a first-princ...; 关键词：Electronic Transport Properties of Diblock Co-Oligomer Molecule Devices Sandwiched between Nitrogen Doping Armchair Graphene Nanoribbon Electrodes NDR

Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology被引量：1: 《Chinese Physics Letters》2017年第8期144-147,共4页张梦映胡志远张正选樊双戴丽华刘小年宋雷; Supported by the Weapon Equipment Pre-Research Foundation of China under Grant No 9140A11020114ZK34147;the Shanghai Municipal Natural Science Foundation under Grant Nos 15ZR1447100 and 15ZR1447200; An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured ...; 关键词：PDSOI Total Ionizing Dose Response of Different Length Devices in 0.13 m Partially Depleted Silicon-on-Insulator Technology

High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry被引量：1: 《Chinese Physics Letters》2015年第12期167-170,共4页陈笛赵柏秦张新; Single arid dual δ-doped GaAs/AlGaAs two-dimensional electron gas （2DEG） Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are me...

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices: 《Chinese Physics Letters》2015年第11期118-121,共4页何泽召杨克武蔚翠李佳刘庆彬芦伟立冯志红蔡树军; Supported by the National Natural Science Foundation of China under Grant No 61306006; We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 Ω.mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4HoSiC substr...; 关键词：Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

On the Fundamental Mode Love Wave in Devices Incorporating Thick Viscoelastic Layers: 《Chinese Physics Letters》2015年第6期100-102,共3页刘建生王立君何世堂; Supported by the National Natural Science Foundation of China under Grant No 11104314; A detailed investigation is presented for Love waves （LWs） with thick viscoelastic guiding layers. A theoretical calculation and an experiment are carried out for LW devices incorporating an SU-8 guiding layer, an S...; 关键词：On the Fundamental Mode Love Wave in Devices Incorporating Thick Viscoelastic Layers

Effects of Pretreatment on the Electronic Properties of Plasma Enhanced Chemical Vapor Deposition Hetero-Epitaxial Graphene Devices: 《Chinese Physics Letters》2014年第9期137-140,共4页张连昌史志文杨蓉黄鉴; Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition hetero- epitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricate...

Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H-TaS2 Devices被引量：1: 《Chinese Physics Letters》2014年第7期164-167,共4页曹玉飞蔡凯明黎丽君鲁文建孙玉平王开友; Supported by the National Basic Research Program of China under Grant Nos 2011CB922200, 2014CB643903 and 2011CBA00111, the National Natural Science Foundation of China under Grant Nos 11174272 and 61225021, the ＇100 Talents Project＇ of Chinese Academy of Sciences of China, the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences＇ Large-scale Scientific Facility under Grant No U1232139, and the Director＇s Fund of Hefei Institutes of Physical Science of Chinese Academy of Sciences under Grant No YZJJ201311.; We carefully investigate the transport and capacitance properties of few layer charge density wave （CDW） 2HTaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is ...

Bipolar Resistive Switching Characteristics of TiN/HfO_(x)/ITO Devices for Resistive Random Access Memory Applications被引量：1: 《Chinese Physics Letters》2013年第10期152-155,共4页TAN Ting-Ting CHEN Xi GUO Ting-Ting LIU Zheng-Tang; Supported by the National Natural Science Foundation of China under Grant No 51202196;the Northwestern Polytechnical University(NPU)Foundation for Fundamental Research(No JC201111);the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)(No 58-TZ-2011);the 111 Project(No B08040).; Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications.The HfOx films with different oxygen contents are deposited by rf magnetron sputtering under differe...; 关键词：structure conduction AMORPHOUS

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 µm Partially-Depleted Silicon-on-Insulator Technology被引量：1: 《Chinese Physics Letters》2013年第8期30-33,共4页HUANG Hui-Xiang BI Da-Wei PENG Chao ZHANG Yan-Wei ZHANG Zheng-Xuan; An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2μm partially-depleted silicon-on-insulator(SOI)technology.The previous radiation-induced narrow channel effect manifests itself wi...; 关键词：TRENCH NARROW TRAPPING

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