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DEVICES: 作品数：1024被引量：1159H指数：13; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：徐志汉张英男梁仁荣周卫李贻昆更多>>; 相关机构：美国ADI集团公司中国汽车技术研究中心清华大学国家电网公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

PZT photonic materials and devices platform: 《Journal of Semiconductors》2024年第12期11-15,共5页Yujun Xie Peng Wang Hongyan Yu Chengyang Zhong Jie Peng Jungan Wang Chen Yang Yu Han Ang Li Zehao Guan Feng Qiu Ming Li; supported by the National Natural Science Foundation of China (Grant Nos.61925505 and 62405070);"Pioneer"and"Leading Goose"R&D Program of Zhejiang Province (Grant No.2024C01112);National Key Research and Development Program of China (Grant No.2023YFB2807100).; Ferroelectric materials are increasingly garnering substantial interest due to their potential applications in optical communication,optical computing,and sensing,among others.This surge in attention is largely due to...; 关键词：PROCESSES compatibility COMPLEMENTARY

A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties: 《Journal of Semiconductors》2023年第6期7-23,共17页Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang; supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202);Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008);the Suzhou Science and Technology Foundation(Grant No.SYG202027)。; Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ...; 关键词：enhancement mode FETS β-Ga_(2)O_(3)

A review of thermal rectification in solid-state devices被引量：1: 《Journal of Semiconductors》2022年第10期79-96,共18页Faraz Kaiser Malik Kristel Fobelets; fully funded by the Commonwealth Scholarship Commission in the UK and Imperial College London; Thermal rectification,or the asymmetric transport of heat along a structure,has recently been investigated as a poten-tial solution to the thermal management issues that accompany the miniaturization of electronic dev...; 关键词：thermal rectification joule heating solid-state devices

COF-based electrochromic materials and devices: 《Journal of Semiconductors》2022年第9期6-9,共4页Yunye Wang Zuo Xiao Shanxin Xiong Liming Ding; the National Natural Science Foundation of China (52073227);the open research fund of Songshan Lake Materials Laboratory (2021SLABFK02);the National Key Research and Development Program of China(2017YFA0206600);the National Natural Science Foundation of China (51922032,21961160720); The transparency,reflectivity and color for electro-chromic(EC)materials can be changed reversibly under low bias[1].EC materials find wide application in many fields like microelectronics,energy-saving buildings,auto...; 关键词：TRANSPARENCY MATERIALS REFLECTIVITY

Hyperdoped silicon:Processing,properties,and devices: 《Journal of Semiconductors》2022年第9期10-24,共15页Zhouyu Tong Mingxuan Bu Yiqiang Zhang Deren Yang Xiaodong Pi; supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101);the Natural Science Foundation of China (Grant Nos. 91964107 and U20A20209);provided by the Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005); Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measure...; 关键词：SILICON hyperdoping ion implantation laser doping PHOTODETECTORS solar cells

In-situ/operando characterization techniques for organic semiconductors and devices被引量：1: 《Journal of Semiconductors》2022年第4期13-23,共11页Sai Jiang Qinyong Dai Jianhang Guo Yun Li; support from Natural Science Foundation of Jiangsu Province (grant number BK20211507);National Natural Science Foundation of China (grant number 61774080);the start-up funds from Changzhou University。; The increasing demands of multifunctional organic electronics require advanced organic semiconducting materials to be developed and significant improvements to be made to device performance. Thus, it is necessary to g...; 关键词：in-situ/operando characterization organic semiconductors structure-property relationship

Preface to the Special Issue on Flexible Energy Devices被引量：1: 《Journal of Semiconductors》2021年第10期1-2,共2页Zhiyong Fan Yonghua Chen Yuanjing Lin Yunlong Zi Hyunhyub Ko Qianpeng Zhang; Flexible energy devices are the building blocks for next-generation wearable electronics.Flexible energy devices are expected to have multiple functions,such as energy conversion from light to electricity and vice ver...; 关键词：BREAKTHROUGH enable PORTABLE

Flexible perovskite solar cells:Materials and devices被引量：2: 《Journal of Semiconductors》2021年第10期119-127,共9页Guanqi Tang Feng Yan; Flexible perovskite solar cells(FPSCs)are supposed to play an important role in the commercialization of perovskite solar cells due to their unique properties,such as high efficiency,thin thickness and being compatibl...; 关键词：flexible perovskite solar cell roll to roll process stretchable and deformable solar cell low temperature processing

A review of manufacturing technologies for silicon carbide superjunction devices被引量：1: 《Journal of Semiconductors》2021年第6期19-24,共6页Run Tian Chao Ma Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan; supported by the National Key Research and Development Program(No.2016YFB0400500);the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。; Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra...; 关键词：silicon carbide(SiC) power semiconductor devices superjunction(SJ) process development

Indium-gallium-zinc-oxide thin-film transistors:Materials,devices,and applications被引量：5: 《Journal of Semiconductors》2021年第3期18-36,共19页Ying Zhu Yongli He Shanshan Jiang Li Zhu Chunsheng Chen Qing Wan; The authors are grateful for the financial support from the National Natural Science Foundation of China(Grant No.62074075,61834001);the National Key R&D Program of China(Grant No.2019YFB2205400).; Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri...; 关键词：indium-gallium-zinc-oxide thin-film transistors flat panel displays SENSORS flexible electronics neuromorphic systems

DEVICES