DOPING

作品数：1646被引量：2696H指数：15
导出分析报告
相关领域：理学更多>>
相关作者：李酽张莉李平邓胜华李义宝更多>>
相关机构：中国科学院中国科学技术大学东北师范大学重庆大学更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 学科=电子电信x
共 条 记 录，以下是1-10
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
High-performance deep ultraviolet light detectors composed of MXene/GaN heterostructures enabled by p-type doping of MXenes
《Science China Materials》2025年第4期1012-1021,共10页Liangpan Yang Yu Cheng Deng Ke Shijie Xu Chao Xie Wenhua Yang Pengbin Gui Zhixiang Huang 
financially supported by the National Natural Science Foundation of China(NSFC,62275002,51902078);the Anhui Provincial Natural Science Foundation(2008085MF205);the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051)。
The performance enhancement of MXene/semiconductor heterostructure-based light detectors is greatly restricted by the relatively small junction barrier due to the limited work function of MXenes.The work function of M...
关键词：MXene work function charge transfer doping deepultraviolet light detector 
Interlayer ferromagnetic coupling in nonmagnetic elements doped Crl_(3) thin films
《Frontiers of physics》2024年第6期61-68,共8页Xuqi Li Xuyan Chen Shiyang Sun Huihui Zhang Haidan Sang Xiaonan Wang Shifei Qi Zhenhua Qiao 
supported by the National Natural Science Foundation of China(Nos.11974098 and 11974327);the Natural Science Foundation of Hebei Province(No.A2023205017);the Science Foundation of Hebei Normal University(No.2019B16);the Fundamental Research Funds for the Central Universities(Nos.WK2030020032 and WK2340000082);Anhui Initiative in Quantum Information Technologies.
The exploration of magnetism in two-dimensional layered materials has attracted extensive research interest.For the monoclinic phase Crl_(3) with interlayer antiferromagnetism,finding a static and robust way of realiz...
关键词：FERROMAGNETISM magnetic doping 
Tailoring threshold voltage of R2R printed SWCNT thin film transistors for realizing 4bit ALU
《npj Flexible Electronics》2024年第1期89-99,共11页Sajjan Parajuli Younsu Jung Sagar Shrestha Jinhwa Park Chanyeop Ahn Kiran Shrestha Bijendra Bishow Maskey Tae-Yeon Cho Ji-Ho Eom Changwoo Lee Jeong-Taek Kong Byung-Sung Kim Taik-Min Lee So Young Kim Gyoujin Cho 
supported by grants fromthe National Research Foundation of Korea,funded by the Korean government(MSIT)(No.2020R1A5A1019649);the Technology Innovation Program(20018357,Development of design for user biological and environmental information reactive printed electronic chameleon sheet)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea).
Despite the roll-to-roll(R2R)gravure printing method emerging as an alternative sustainable technology for fabricating logic circuits based on p-and n-types of single-walled carbon nanotube thin film transistors(p,n-S...
关键词：R2R film DOPING 
The critical role of energetic fluctuations in charge separation for efficient molecular doping of organic semiconductors
《Science China Chemistry》2024年第11期3675-3680,共6页Yan Zeng Guangchao Han Yuanping Yi 
supported by the Beijing Natural Science Foundation (2244083);the National Natural Science Foundation of China (22173108);the Ministry of Science and Technology of China (2018YFA0703200);the Youth Innovation Promotion Association CAS (2023037)。
Molecular doping is essential to improve the electrical conductivity of organic semiconductors for high-performance organic electronic devices. However, the doping efficiency is influenced by several factors, such as ...
关键词：doping efficiency polarization energies energetic fluctuations organic semiconductors 
Study of the Electrical Parameters of a Silicon Solar Cell (n+/p/p+) under the Effect of Temperature by Optimization of the Base Thickness and the Doping Rate
《Journal of Materials Science and Chemical Engineering》2024年第11期15-23,共9页Sada Traore Ansoumane Diedhiou Abel Sambou Moussa Camara 
In this work, we propose an approach to model the basic parameters of a silicon solar cell (n+/p/p+) by optimizing the doping rate and the thickness of the base using Matlab Simulink. This technique applies to electri...
关键词：Solar Cell Doping Rate Temperature Thickness 
Atomic Nb-doping of WS_(2) for high-performance synaptic transistors in neuromorphic computing
《Microsystems & Nanoengineering》2024年第5期221-230,共10页Kejie Guan Yinxiao Li Lin Liu Fugin Sun Yingyi Wang Zhuo Zheng Weifan Zhou Cheng Zhang Zhengyang Cai Xiaowei Wang Simin Feng Ting Zhang 
The authors acknowledge the funding support from the National Natural Science Foundation for Distinguished Young Scholars of China(No.62125112);the National Natural Science Foundation of China(62371448,52203356,62301553,and 62204254);the Natural Science Foundation of Jiangsu Province of China(BK20221065 and BK20230234);the China Postdoctoral Science Foundation(2023M742558 and 2022M712323);the Fundamental Research Funds for the Central Universities of China(JUSRP122050);the Suzhou Basic Research Program(No.SJC2022002 and SJC2023004).
Owing to the controllable growth and large-area synthesis for high-density integration,interest in employing atomically thin two-dimensional(2D)transition-metal dichalcogenides(TMDCs)for synaptic transistors is increa...
关键词：TRANSISTORS DOPING TRAPPING 
NaGd_(0.4)Eu_(0.6)Mg_(1-x)Zn_(x)WO_(6)solid solution red phosphors:Microstructure variation and luminescence enhancement induced by Zn^(2+)-doping
《Journal of Rare Earths》2024年第7期1224-1232,I0001,共10页Yu Gao Jiayang Liao Mingyi Zhang Qingmei Tang Ting Zhou Mengjiao Liu Yan Zhao Xin Lai Daojiang Gao 
Project supported by the National Natural Science Foundation of China(62104164);Natural Science Foundation of Sichuan Province(2022NSFSC2001,2022NSFSC1212)。
Red phosphor is an important component of the phosphor-converted white light-emitting diodes(pcWLEDs).The development of the novel red phosphor with excellent luminescence properties is of great significance for high ...
关键词：Double perovskite Tungstate phosphor Zn^(2+)-doping MICROSTRUCTURE Luminescence Rare earths 
Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials
《Journal of Semiconductors》2024年第7期85-91,共7页Xiaoshan Du Shu Wang Qiaoxuan Zhang Shengyao Chen Fengyou Yang Zhenzhou Liu Zhengwei Fan Lijun Ma Lei Wang Lena Du Zhongchang Wang Cong Wang Bing Chen Qian Liu 
supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011);the National Key Research and Development Program of China(No.2016YFA0200403);Eu-FP7 Project(No.247644);CAS Strategy Pilot Program(No.XDA 09020300);Fundamental Research Funds for the Central Universities(No.buctrc202122);the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401);the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001);funded by the Ph.D Foundation of Hebei University of Water Resources and Electric Engineering(No.SYBJ2202);Funded by Science and Technology Project of Hebei Education Department(No.BJK2022027)。
Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moder...
关键词：2D-material memristor laser doping laser direct writing memristive mechanism 
Hole mobility enhancement in monolayer WSe_(2)p-type transistors through molecular doping
《Science China(Information Sciences)》2024年第6期203-209,共7页Shiyuan LIU Xiong XIONG Xin WANG Xinhang SHI Ru HUANG Yanqing WU 
supported by National Natural Science Foundation of China(Grant Nos.61927901,62090034,62104012);National Key Research and Development Program of China(Grant Nos.2022YFB4400102,2021YFA1202903);Beijing Natural Science Foundation(Grant No.4242057);Technology Innovation Program of Hunan Province(Grant No.2021RC5008)。
Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconducto...
关键词：CVD-grown WSe_(2) molecular doping 4-NBD p-type transistors hole mobility 
Electron-transporting boron-doped polycyclic aromatic hydrocarbons:Facile synthesis and heteroatom doping positions-modulated optoelectronic properties
《Chinese Chemical Letters》2024年第4期447-451,共5页Tingting Huang Zhuanlong Ding Hao Liu Ping-An Chen Longfeng Zhao Yuanyuan Hu Yifan Yao Kun Yang Zebing Zeng 
the National Natural Science Foundation of China (Nos.22375059, 22005133, 51922039 and52273174);Shenzhen Science and Technology Program (No.RCJC20200714114434015);Science and Technology Innovation Program of Hunan Province (No.2020RC5033);National Key Research and Development Program of China (No.2020YFC1807302) for financial support。
While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydrocarbons(PAHs), the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remai...
关键词：Polycyclic aromatic hydrocarbon Optoelectronic properties Heteroatom doping n-Type organic semiconductors Structure–property relationship 
全选清除导出
共22页<12345678910>
检索报告 对象比较 聚类工具 使用帮助 返回顶部