云南高校图书馆联盟文献共享服务平台- DOUBLE-LAYER

DOUBLE-LAYER: 作品数：239被引量：373H指数：7; 导出分析报告; 相关领域：理学更多>>; 相关作者：刘云钱振东夏燚张小松付蕊更多>>; 相关机构：东南大学南京师范大学北京大学中国石油大学（北京）更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划北京市自然科学基金国家高技术研究发展计划更多>>

Magneto-Orientated Graphite Double-Layer Homo-Structure with Broadband Microwave Absorption: 《Chinese Physics Letters》2023年第11期149-154,共6页王俊松丁伟张成宏邱康高佑琳陈棉科 Muhammad Adnan Aslam Mahmoud AKhalifa 罗家亮方军盛志高; supported by the National Key R&D Program of China(Grant No.2021YFA1600203);the National Natural Science Foundation of China(Grant Nos.U2032218,11904116,and 12111530283);the Plan for Major Provincial Science&Technology Project(Grant No.202003a05020018);supported by the High Magnetic Field Laboratory of Anhui Province。; We utilized magnetic fields as an efficient tool to manipulate the orientation and electromagnetic properties of graphite micro-flakes(GMFs).As a result,we successfully developed a GMF double-layer homo-structure,whic...; 关键词：microwave MATCHING ABSORPTION

A Theoretical Model for the Asymmetric Transmission of Powerful Acoustic Wave in Double-Layer Liquids被引量：2: 《Chinese Physics Letters》2017年第8期88-91,共4页王寻陈伟中王奇梁金福; Supported by the National Natural Science Foundation of China under Grant Nos 11334005,11574150 and 11564006; A theoretical model which couples the oscillation of cavitation bubbles with the equation of an acoustic wave is utilized to describe the sound fields in double-layer liquids, which can be used to realize the asymmetr...; 关键词：A Theoretical Model for the Asymmetric Transmission of Powerful Acoustic Wave in Double-Layer Liquids

Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte: 《Chinese Physics Letters》2015年第3期149-152,共4页周菊枚高晓红张洪亮; Supported by the National Natural Science Foundation of China under Grant Nos 51302276 and 51301043;the Ningbo Natural Science Foundation under Grant No 2013A610129; We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate ...; 关键词：PSG Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte EDL

Semimetal NaaBi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy被引量：1: 《Chinese Physics Letters》2014年第11期130-132,共3页文竞郭画颜晨晖王振宇常凯邓鹏张腾张志东季帅华王立莉何珂马旭村陈曦薛其坤; Supported by the National Natural Science Foundation of China under Grant Nos 11025419 and 50831006, and the National Basic Research Program of China under Grant No 2011CB921904.; Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tu...

Ultralow-Voltage Electric-Double-Layer Oxide-Based Thin-Film Transistors with Faster Switching Response on Flexible Substrates被引量：2: 《Chinese Physics Letters》2014年第7期218-221,共4页张进吴国栋; Supported by the National Natural Science Foundation of China under Grant No 11174300.; Phosphosilicate glass （PSG） electrolyte films are deposited by improving the content of phosphorus doping during plasma-enhanced chemical vapor deposition, and a fast electric-double-layer （EDL） polarization respo...

The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulator Thin-Film Transistors: 《Chinese Physics Letters》2012年第1期235-237,共3页GAO Hai-Xia HU Rong YANG Yin-Tang; Supported by the National Natural Science Foundation of China for Distinguished Young Scholars under Grant No 60725415;the Fundamental Research Funds for the Central Universities under Grant No K50510250001.; A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conventional ZnO thin-film transistor structure,the novel thinf...; 关键词：TRANSISTOR double structure

High-Performance Humidity Sensors Based on Double-Layer ZnO-TiO_(2) Nanofibers via Electrospinning被引量：1: 《Chinese Physics Letters》2011年第9期69-72,共4页YUE Xue-Jun HONG Tian-Sheng XU Xing LI Zhen; by Special Fund for Agro-scientific Research in the Public Interest of China(No 200903023);Development and Extension of Practical Low-Cost Low-Power Automatic Drip Irrigation Controller(2010GA780046);Research and Application Demonstration of Orchard Water and Fertilizer Drip Irrigation Controller(2010B020314007).; ZnO and TiO_(2) nanofibers are synthesized via electrospinning methods and characterized by x−ray diffraction,scanning electron microscopy,and transmission electron microscopy.Humidity sensors with double-layer sensin...; 关键词：materials fibers SPINNING

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric: 《Chinese Physics Letters》2009年第10期200-202,共3页黄玥苟鸿雁孙清清丁士进张卫张世理; We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals...; 关键词：Electronics and devices Semiconductors Surfaces interfaces and thin films Nanoscale science and low-D systems

Design of Infrared Inverted Telephoto-Optical System with Double-Layer Harmonic Diffractive Element被引量：7: 《Chinese Physics Letters》2007年第7期1973-1976,共4页范长江王肇圻林列张梅范海英; Supported by the National Natural Science Foundation of China under Grant No 60577015.; A double-layer harmonic diffractive element （HDE） structure is investigated and the optimization procedure is given based on the equation of diffraction efficiency of the double-layer diffractive optical element. A ...

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator被引量：2: 《Chinese Physics Letters》2007年第6期1664-1667,共4页赵谊华董桂芳王立铎邱勇; Supported by the National Natural Science Foundation of China under Grant No 50573039, the Specialized Research Fund for the Doctoral Programme of Higher Education of China under Grant No 20060003085, and the National Key Basic Research Programme of China under Grant No 2002CB613405.; We employ the Ta2Os/PVP （poly-4-vinylphenol） double-layer gate insulator to improve the performance of pentacene thin-film transistors. It is found that the double-layer insulator has low leakage current, smooth sur...; 关键词：FIELD-EFFECT TRANSISTORS DIELECTRIC LAYER GATE DIELECTRICS MORPHOLOGY

DOUBLE-LAYER