DOUBLE-LAYER

作品数：239被引量：373H指数：7
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  • 期刊=Journal of Semiconductorsx
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2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)
《Journal of Semiconductors》2023年第7期28-31,共4页Tingting Han Yuangang Wang Yuanjie Lv Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng 
supported by the National Natural Science Foundation of China under Grant U21A20503.
This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott...
关键词：β-Ga_(2)O_(3) breakdown voltage heterojunction diode(HJD) junction termination extension(JTE) power figure-of-merit(PFOM) 
Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors被引量：1
《Journal of Semiconductors》2021年第1期122-127,共6页Chenrong Gong Lin Chen Weihua Liu Guohe Zhang 
Multi-terminal electric-double-layer transistors have recently attracted extensive interest in terms of mimicking synaptic and neural functions.In this work,an Ion-Gel gated graphene synaptic transistor was proposed t...
关键词：Ion-Gel GRAPHENE synaptic transistors short-term plasticity(STP) 
Hydrodynamic simulations of terahertz oscillation in double-layer graphene
《Journal of Semiconductors》2018年第12期23-25,共3页Wei Feng 
Project supported by the National Natural Science Foundation of China(No.11604126)
We have theoretically studied current self-oscillations in double-layer graphene n+nn+ diodes driven by dc bias with the help of a time-dependent hydrodynamic model. The current self-oscillation results from resonant ...
关键词：TERAHERTZ GRAPHENE current self-oscillation 
Nonlinear dynamics in a terahertz-driven double-layer graphene diode
《Journal of Semiconductors》2018年第12期127-130,共4页Wei Feng Lijuan Shi 
Project supported by the National Natural Science Foundation of China(No.11604126),the National Natural Science Foundation of China(No.61601205);the Basic Research Program of Jiangsu Province(Natural Science Foundation for Young Scholars)(No.BK20160541);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.16KJB140003)
By using the time-dependent hydrodynamic equations, we carry out a theoretical study of nonlinear dynamics in an n+nn+ double-layer graphene diode driven by terahertz radia-tion. A cooperative nonlinear oscillatory mo...
关键词：NONLINEAR TERAHERTZ double-layer graphene 
An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
《Journal of Semiconductors》2014年第9期162-165,共4页马雪丽 杨红 王文武 殷华湘 朱慧珑 赵超 陈大鹏 叶甜春 
Project supported by the Important National Science & Technology Specific Projects(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,61306129)
We evaluated the TiN/TaN/TiA1 triple-layer to modulate the effective work function （EWF） of a metal gate stack for the n-type metal-oxide-semiconductor （NMOS） devices application by varying the TiN/TaN thickness. ...
关键词：TAN TiA1 Ta-O dipole effective work function 
Significantly enhanced transmission achieved with double-layered metallic aperture arrays with sub-skin-depth Ag film被引量：1
《Journal of Semiconductors》2012年第12期1-4,共4页肖功利 杨宏艳 
We present both theoretical and experimental investigation on significantly enhanced transmission through （Ag/Au） double-layered metallic aperture arrays with sub-skin-depth Ag film due to the coupling role of a sur...
关键词：optics at surfaces surface plasmon polariton coupling sub-skin-depth FDTD method double-layeredmetallic aperture arrays enhanced transmission 
Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals
《Journal of Semiconductors》2009年第11期38-42,共5页倪鹤南 吴良才 宋志棠 惠春 
Project supported by the National Natural Science Foundation of China(No.60776058);the State Key Development Program for Basic Research of China (Nos.2007CB935400,2006CB302700)
An MOS （metal oxide semiconductor） capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabrica...
关键词：nonvolatile memory nanocrvstal memory MOS capacitor 
Ag surface plasmon enhanced double-layer antireflection coatings for GaAs solar cells被引量：2
《Journal of Semiconductors》2009年第7期19-23,共5页王彦硕 陈诺夫 张兴旺 杨晓丽 白一鸣 崔敏 汪宇 陈晓锋 黄添懋 
Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically.The reflectance of double-layer antireflection coatings（ARCs） with different suspensions of Ag particles is calc...
关键词：antireflection coating surface plasmon resonance GaAs solar cells 
Synthesis and Characterization of SiCOF/a-C∶F Double-Layer Films with Low Dielectric Constant for Copper Interconnects~*
《Journal of Semiconductors》2006年第3期429-433,共5页张卫 朱莲 孙清清 卢红亮 丁士进 
国家自然科学基金(批准号:60176013);上海先进材料研究发展基金(批准号:0304)资助项目~~
A novel double-layer film of SiCOF/a-C ： F with a low dielectric constant is deposited using a PECVD system. The chemical structure of the film is characterized with Fourier transform infrared spectroscopy （FTIR）. ...
关键词：low dielectric constant material FTIR SIMS 
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