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相关作者：刘海辉王宁靳艳梅张兴祥汪海燕更多>>
相关机构：厦门大学天津工业大学上海交通大学复旦大学更多>>
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Etching Mechanisms of CF_3 Etching Fluorinated Si:Molecular Dynamics Simulation
《Plasma Science and Technology》2012年第7期670-674,共5页赵成利 邓朝勇 孙伟中 张浚源 陈峰 贺平逆 陈旭 芶富均 
supported financially by Guizhou Province of China(No.700968101);International Thermonuclear Experimental Reactor(ITER) program special(No.2009GB104006)
Molecular dynamics simulations are performed to investigate CF3 continuously bom- barding the amorphous silicon surface with energies of 10 eV, 50 eV, 100 eV and 150 eV at normal incidence and room temperature. The im...
关键词：molecular dynamics simulation amorphous silicon incident energy 
Electrical Properties of Plasma Deposited Low-Dielectric-Constant Fluorinated Amorphous Carbon Films
《Plasma Science and Technology》2006年第6期724-726,共3页吴振宇 杨银堂 汪家友 
supported by the Key Laboratory Foundation of Electron Devices Reliability Physics and Applications(No.51433020205DZ01);the Xi'an Applied Materials Innovation Fund(No.XA-AM-200501)
Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapour deposition （ECR-CVD）. Chemical structures were a...
关键词：electrical properties conduction behaviour chemical vapour deposition a-C：F 
A Study on Optical Emission of CF_4+CH_4 Plasma and Deposition Mechanisms of a-C : F, H Films
《Plasma Science and Technology》2005年第1期2669-2672,共4页黄松 辛煜 宁兆元 
TheprojectsupportedbytheFoundationofKeyLabortoryofThinFilm,JiangsuProvince
Fluorinated amorphous carbon (a-C : F,H) films were deposited by inductively coupled plasma using CH4 and CF4 gases. Actinometrical optical emission spectroscopy (AOES) was used to determine the relative concentration...
关键词：optical emission spectroscopy fluorinated carbon film FTIR 
Relationship Between Thermal Stability and Optical Bandgap of Fluorinated Amorphous Carbon Films
《Plasma Science and Technology》2001年第5期941-946,共6页杨慎东 宁兆元 黄峰 程珊华 叶超 
Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the...
关键词：Relationship Between Thermal Stability and Optical Bandgap of Fluorinated Amorphous Carbon Films 
Plasma Deposition of Fluorinated Amorphous Carbon with CHF_3 and C_6H_6 Mixture
《Plasma Science and Technology》2000年第6期573-576,共4页程珊华 康健 叶超 宁兆元 
A-C:F, H film have been studied because of their low dielectric constant for application in interlayer dielectric in ULSC. These films were deposited by ECR plasma Reactor with CHF3 and C6H6 mixture as source gas. Th...
关键词：CHF Plasma Deposition of Fluorinated Amorphous Carbon with CHF3 and C6H6 Mixture CF CAF 
Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma
《Plasma Science and Technology》2000年第5期469-474,共6页叶超 康健 宁兆元 程珊华 
a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radic...
关键词：CHF XPS cm Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma 
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