HOMO

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Dithieno[3′,2′:3,4;2″,3″:5,6]benzo[1,2-c][1,2,5]oxadiazole-based polymer donors with deep HOMO levels被引量：4
《Journal of Semiconductors》2021年第6期13-16,共4页Xiongfeng Li Jingui Xu Zuo Xiao Xingzhu Wang Bin Zhang Liming Ding 
supported by the National Key Research and Development Program of China(2017YFA0206600,SQ2020YFE010701);the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720,51473053);the Natural Science Foundation of Hunan Province(2019JJ50603)。
Star nonfullerene acceptors like ITIC[1],IDIC[2],O-IDTBR[3],IT-4 F[4],COi8 DFIC[4],Y6[6]etc.continuously emerge and keep pushing the power conversion efficiency(PCE)of organic solar cells forward.These small molecules...
关键词：HARVESTING NARROW VISIBLE 
High-quality ZnO growth, doping, and polarization effect
《Journal of Semiconductors》2016年第3期1-13,共13页汤琨 顾书林 叶建东 朱顺明 张荣 郑有炓 
Project supported by the National Natural Science Foundation of China(Nos.61025020,61274058,61322403,61504057,61574075);the Natural Science Foundation of Jiangsu Province(Nos.BK2011437,BK20130013,BK20150585);the Priority Academic Program Development of Jiangsu Higher Education Institutions;the Fundamental Research Funds for the Central Universities
The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding（1） the development of high-quality epitaxy techniques,（2...
关键词：ZnO homo-and hetero-epitaxy native defects p-type doping tellurium-nitrogen co-doping ZnMgO/ZnO hetero-structure 
Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power
《Journal of Semiconductors》2011年第11期24-30,共7页Moumita Mukherjee Pravash R.Tripathy S.P.Pati 
Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, devel- oped by t...
关键词：admittance characteristics double drift diode high-power IMPATT high-efficiency MM-wave de- vice Si/Ge and Ge/Si material systems 
High-quality homoepitaxial layers grown on 4H-SiC at a high growth rate by vertical LPCVD
《Journal of Semiconductors》2011年第4期44-47,共4页吴海雷 孙国胜 杨挺 闫果果 王雷 赵万顺 刘兴昉 曾一平 温家良 
Project supported by the National Natural Science Foundation of China(No60876003);the Chinese Academy of Sciences(No Y072011000);the Beijing Municipal Science & Technology Commission(NoD09080300500903);the Knowledge Innovation Program of the Chinese Academy of Sciences(NoISCAS2008T04)
High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC（0001） Si planes in a vertical low-pressure hot-wall CVD system（LPCVD） by using trichlorosilane（TCS） as a silicon precursor source tog...
关键词：4H-SIC homoepitaxial growth vertical hot wall CVD crystal morphology 
Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer
《Journal of Semiconductors》2009年第3期23-25,共3页贾仁需 张义门 张玉明 王悦湖 张林 
supported by the State Key Development Program for Basic Research of China (No. 51327020202);the Key Fund of the Ministryof Education of China (No. 106150);the Xi’an Applied Materials Innovation Fund (No. XA-AM-200607).
Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition （HWCVD） have been studied using photoluminescence （PL） technique in the temperature range of 10 to 240 K. A broadband g...
关键词：4H-SiC Homoepitaxial layers broadband green luminescence vacancies of carbon deep level defects 
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