IGZO

作品数：105被引量：111H指数：5
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相关领域：电子电信更多>>
相关作者：张建华李喜峰陈龙龙喻志农高晓红更多>>
相关机构：山东大学深圳市华星光电技术有限公司东南大学深圳市华星光电半导体显示技术有限公司更多>>
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相关基金：国家自然科学基金山东大学自主创新基金中国博士后科学基金国家重点基础研究发展计划更多>>
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Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel
《Journal of Semiconductors》2024年第7期40-44,共5页Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao 
funded in part by the National Key R&D Program of China(Grant No.2022YFB3606900);in part by the National Natural Science of China(Grant No.62004217)。
In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for th...
关键词：In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor 
Mobility impact on compensation performance of AMOLED pixel circuit using IGZO TFTs被引量：1
《Journal of Semiconductors》2019年第2期33-38,共6页Congwei Liao 
supported by National Natural Science Foundation of China (No. 61404002);the Shenzhen Municipal Scientific Program (No. JCYJ20150626111117384)
The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper...
关键词：IGZO TFT PIXEL circuit MOBILITY 
Simulation model for electron irradiated IGZO thin film transistors被引量：2
《Journal of Semiconductors》2018年第2期17-21,共5页G K Dayananda C Shantharama Rai A Jayarama Hyun Jae Kim 
An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the s...
关键词：simulation model IGZO TFT electron irradiation 
Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime被引量：2
《Journal of Semiconductors》2011年第7期34-37,共4页何红宇 郑学仁 
Project supported by the Cadence Design System,Inc.
An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet appro...
关键词：amorphous In-Ga-Zn-oxide（a-IGZO） thin-film transistors（TFTs） surface potential threshold voltage trap states 
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