云南高校图书馆联盟文献共享服务平台- LASER

检索规则说明：AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：范例一： (K=图书馆学 OR K=情报学) AND A=范并思　　　　范例二：J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual

全部期刊核心期刊 EI来源期刊 SCI来源期刊 CA来源期刊 CSCD来源期刊 CSSCI来源期刊

A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode被引量：7: 《Journal of Semiconductors》2022年第1期15-17,共3页Jing Yang Degang Zhao Zongshun Liu Feng Liang Ping Chen Lihong Duan Hai Wang Yongsheng Shi; supported by the National Natural Science Foundation of China(Grant Nos.62034008,6207414262074140,61974162,61904172,61874175);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115);Beijing Nova Program(Grant No202093);Beijing Municipal Science and Technology Project(Grant No.Z211100007921022);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No XDB43030101)。; Ultraviolet(UV)and deep-UV light emitters are prom-ising for various applications including bioagent detection,wa-ter and air purification,dermatology,high-density optical stor-age,and lithography.However,to achieve s...; 关键词：ALGAN LASER WAVEGUIDE

A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-μm GaAs E-mode pHEMT technology被引量：2: 《Journal of Semiconductors》2021年第7期58-70,共13页Ahmed Wahba Lin Cheng Fujiang Lin; This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology....; 关键词：high current drivers impedance matching laser diode driver optical transmitter NRZ PAM4 pHEMT technology

Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode被引量：1: 《Journal of Semiconductors》2020年第6期29-34,共6页A.Menani L.Dehimi S.Dehimi F.Pezzimenti; The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of ...; 关键词：laser diode quantum well optical gain threshold current temperature

Design of 20 W fiber-coupled green laser diode by Zemax被引量：2: 《Journal of Semiconductors》2017年第9期86-89,共4页Yunfei Qi Pengfei Zhao Yulong Wu Yongqi Chen Yonggang Zou; supported by the National Key R&D Program of China(No.2016YFB0402105);the Key Deployment Program of the Chinese Academy of Sciences(No.KGZD-SW-T01-2);the National Natural Science Foundation of China(No.61404135); We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 Hm and numeri...; 关键词：laser diode green light single emitter combination technology

Influence of the thickness change of the wave-guide layers on the threshold current of GaAs-based laser diode: 《Journal of Semiconductors》2016年第8期72-76,共5页庞艺李翔赵柏秦; The paper mainly deals with theoretical investigations of the effect of the thickness change of the wave- guide layers on the threshold current. It is analyzed according to the result of a numerical simulation that as...; 关键词：SEMICONDUCTOR laser diode threshold current simulation

Preparation for Bragg grating of 808 nm distributed feedback laser diode被引量：1: 《Journal of Semiconductors》2015年第5期54-57,共4页王勇刘丹丹冯国庆叶镇高占琦王晓华; Project supported by the National Natural Science Foundation of China(No.11474036);the National Key Lab of High Power Semiconductor Lasers Foundations(No.9140C310103120C3101); The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic phot...; 关键词：distributed feedback （DFB） laser diode （LD） GRATING holographic photolithography

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode: 《Journal of Semiconductors》2014年第2期67-71,共5页刘宇安罗文浪; The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at th...; 关键词：random telegraph signal noise DEFECT A1GaInP laser diode

A 1.25 Gb/s laser diode driver with pulse width optimization: 《Journal of Semiconductors》2010年第9期84-87,共4页王欢王志功徐建王蓉苗澎罗寅; supported by the National High Technology Research and Development Program of China(No.2007AA01Z2a5); A 1.25 Gb/s laser diode driver（LDD） with pulse width optimization has been implemented in a 0.6-μm BiCMOS process.This paper illustrates the relation between the pulse width distortion（PWD） of the output eye diag...; 关键词：LDD PWD CROSSING BICMOS

A fast automatic power control circuit for a small form-factor pluggable laser diode drive: 《Journal of Semiconductors》2010年第6期146-150,共5页王欢王志功徐建罗寅苗澎杨思勇李伟; Project supported by the National High Technology Research and Development Program of China(No.2007AA01Z2a5).; A fast automatic power control（APC） circuit for a laser diode driver（LDD） has been implemented in a 0.6-μm BiCMOS process.The APC circuit adopts double-loops and variable-bandwidth techniques to achieve a turn- o...; 关键词：APC LDD turn-on time SFP

Frequency and wavelength tunable optical microwave source based on a distributed Bragg reflector self-pulsation laser被引量：2: 《Journal of Semiconductors》2010年第6期54-56,共3页刘扬孙瑜孔端花王宝军边静安欣赵玲娟王圩; Project supported by the National High Technology Research and Development Program of China(Nos.2006AA01Z256, 2007AA03Z419,2007AA03Z417);the State Key Development Program for Basic Research of China(Nos.2006CB604901, 2006CB604902);the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021).; A frequency and wavelength tunable self-pulsation laser based on DBR laser devices is reported for the first time.This laser generates continuous tunable optical microwave in the range of 1.87-21.81 GHz with 3-dB line...; 关键词：distributed Bragg reflector laser diode self-pulsation laser optical microwave sources quantum-well intermixing

LASER_DIODE