This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator (SO1) technology node. It consists of two access transistors and two pull-down tran...
This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an ...