不同工作压强下ICP刻蚀对SiC表面损伤的研究  

Surface damage of inductively coupled plasma etched SiC on different work pressure

作　　者：吕英[1] 庞爱锁[1] 杨伟锋[1] 陈厦平[1] 朱会丽[1] 吴正云[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《福州大学学报（自然科学版）》2007年第S1期8-10,共3页Journal of Fuzhou University(Natural Science Edition)

摘　　要：采用CF4/O2作为刻蚀气体,对不同工作压强下ICP刻蚀SiC材料的刻蚀速率以及随之引入的刻蚀损伤进行了研究.结果表明,随着工作压强的增加,ICP刻蚀S iC材料的速率先缓慢增加,然后急剧降低.通过XPS光电子能谱分析发现刻蚀后样品表面的F、O含量均有所增加,表面污染加剧,刻蚀引入的损伤随着工作压强的增加而增加.4H silicon carbide(SiC) was dry etched in an inductively coupled plasma(ICP) system,using CF4/O2 gas mixtures.Etch rate and surface damage induced by ICP etching have been investigated as a function of the work pressure.We found that the etch rate of SiC initially increased slightly and then decreased rapidly with the increase of work pressure.It was also observed that the F and O radical concentration on the etched surface,which was obtained by X-ray photoelectron spectroscopy measurements,increased.The su...

关 键 词：SIC ICP刻蚀 工作压强 表面损伤 

分 类 号：O472.1[理学—半导体物理]