优化场板GaN HEMT沟道电子温度分布抑制电流崩塌  

Temperature Distribution of Channel Electron in Field-Plated GaN HEMT for Reduction of Current Collapse

作　　者：杜江锋[1] 罗大为[1] 罗谦[1] 卢盛辉[1] 于奇[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子与固体电子学院电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体技术》2008年第S1期105-108,共4页Semiconductor Technology

摘　　要：基于带场板GaN HEMT器件物理模型和电流崩塌效应机理,通过仿真优化场板结构参数调制沟道中二维电子气温度分布,以达到抑制器件电流崩塌目的。研究表明,优化场板长度及绝缘层厚度能有效降低沟道电子峰值温度。对于外加源漏电压为100V,栅长0.5μm,栅漏间距2μm的GaN HEMT器件,获得了场板长度与绝缘层厚度优值分别为1μm和0.5μm,其沟道电子峰值温度比无场板时下降了47%。并研究确定了场板长度优值与栅漏距以及绝缘层厚度与漏压的数学关系模型。Based on physics models of field-plated GaN-based high electron mobility transistors(HEMT)and current collapse mechanism,the temperature distribution of channel two dimension electron gas(2DEG)was optimized by modulating the structure parameters of field plate by means of numerical device simulations for the reduction of current collapse.It is found that the optimization of field-plate length and insulator thickness tox can reduce effectively the channel electron peak temperature.For the gate length 0.5 μm and gate-drain spacing 2 μm GaN-based HEMT,the optimum of field-plate length and insulator thickness tox is 1 μm and 0.5 μm,respectively,and the channel electron peak temperature goes down 47% comparing with the non-field-plated GaN-based HEMT.And the mathematic relation models between field-plate length optimum and gate-drian spacing,as well as between insulator thickness optimum and drain vol-tage,are obtained by means of numerical device simulations.

关 键 词：GAN高电子迁移率晶体管 沟道电子温度 场板 电流崩塌 

分 类 号：TN386[电子电信—物理电子学]