垂直式HVPE生长GaN材料的数值模拟  

Vertical HVPE Process Numerical Simulation of GaN

作　　者：赵勇明[1] 陈贵锋[1] 陈雷英[1] 马晓薇[1] 白云娜[1] 李养贤[1] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130

出　　处：《半导体技术》2008年第S1期119-122,共4页Semiconductor Technology

基　　金：河北省科学技术研究与发展指导计划(07215134);河北省自然科学基金(E2007000119)

摘　　要：建立了HVPE的GaN流体动力学模型。基于CFD理论在三维空间内模拟了垂直式HVPE反应室生长GaN材料的流场、生成物的分布及沉积速率等重要物理参数。通过变化衬底距离出气口的距离、NH3出气口尺寸、衬底旋转等模型,分别进行数值模拟,模拟结果显示,衬底距离出气口的距离及NH3出气口尺寸是影响GaCl与NH3在衬底上的均匀分布和沉寂速率均匀性的重要因素。衬底不同转速则对本反应室中的GaCl与NH3在衬底上的均匀分布、沉寂速率的均匀性影响不大。通过数值模拟发现反应室存在的缺陷,并利用模拟结果对反应室进行了优化。A model of fluid dynamic for GaN HVPE system was setup.Flow patterns,spatial distribution of chemical species and growth rates during growth processes of GaN in vertical HVPE reactor were simulated three-dimensionally based on CFD theory.Through changing the distance between substrate and outlet,NH3 outlet of size,substrate rotation model,separately through simulation,and the results are:the distance between substrate and outlet,NH3 outlet of size are importance equation affect on GaCl and NH3 concentration on the substrate uniformity distributing,the deposition rate of GaN,but substrate rotation equation affect on GaCl and NH3 concentration on the substrate uniformity distributing,the deposition rate of GaN is not too evidence,through simulation the bug of reactor is found,and reactor configuration is optimized based on the simulation results.

关 键 词：氮化镓 氢化物气相外延 计算流体力学理论 

分 类 号：TN304[电子电信—物理电子学]