ULSI多层铜布线钽阻挡层及其CMP抛光液的优化  

Tantalum barrier layer of copper interconnection in ULSI and optimization of CMP slurry

作　　者：刘玉岭[1] 邢哲[1] 檀柏梅[1] 王新[1] 李薇薇[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2004年第7期18-20,34,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60176033);河北自然科学基金资助项目(502029)

摘　　要：分析了铜多层布线中阻挡层的选取问题,根据铜钽在氧化剂存在的情况下,抛光速率对pH值的不同变化趋势,提出优化碱性抛光液配比进而改变pH值,以达到铜钽抛光一致性的方法,并进行了相应的实验研究。The selection of barrier layer metal in copper interconnection is analyzed. Under thecondition of oxidant in existence,the removal rate of copper and tantalum have a opposite move-ment trend with the changing of pH value. We advanced a method that optimize the content of slurry,which changed the pH value at the same time, to obtain a uniform removal rate of copper and tanta-lum during CMP process, and we carried some corresponding experiments out to study that.

关 键 词：化学机械抛光 抛光液 CMP 多层布线 ULSI 铜钽抛光 

分 类 号：TN305.2[电子电信—物理电子学]