一种新的SOI射频集成电路结构与工艺  

A Novel Structure of SOI RF IC and Its Process Technology

作　　者：杨荣[1] 李俊峰[1] 钱鹤[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所一室,北京100029

出　　处：《微电子学》2004年第5期569-571,共3页Microelectronics

基　　金：国家863高技术研究与发展项目(2002AA1Z1580)

摘　　要：　立足于与常规CMOS兼容的SOI工艺,提出了电子束/I线混合光刻制造SOI射频集成电路的集成结构和工艺方案。该方案只使用9块掩模版即完成了LDMOS、NMOS、电感、电容和电阻等元件的集成。经过对LDMOS、NMOS的工艺、器件的数值模拟和体硅衬底电感的初步实验,获得了良好的有源和无源器件特性,证明这一简洁的集成工艺方案是可行的。A novel structure of SOI RF IC and its process technology are proposed based on conventional SOI CMOS technology. This approach includes only 9 masks, while it covers the integration of LDMOS and NMOS transistors, inductors, capacitors and resistors. The numeric simulation of LDMOS and NMOS devices, as well as the experiment of inductors on bulk-Si substrate, demonstrate excellent performance of active devices and passive elements, which validates the feasibility of the compact integration technology for SOI RF IC.

关 键 词：SOI工艺 射频集成电路 LDMOS NMOS 掩模版 光刻 硅衬底 集成工艺 CMOS 有源 

分 类 号：TN386[电子电信—物理电子学] TN432