CMOS器件的脉冲γ总剂量效应初探  

Initial study of pulsed γ total dose effect in CMOS devices

作　　者：罗尹虹[1] 龚建成[1] 关颖[1] 石小峰[1] 郭红霞[1] 

机构地区：[1]西北核技术研究所

出　　处：《核电子学与探测技术》2004年第6期745-748,共4页Nuclear Electronics & Detection Technology

摘　　要：利用"强光一号"加速器对部分CMOS器件开展了脉冲总剂量时间关联的辐射效应实验,研究了脉冲辐照后阈值电压漂移与时间的关联响应,以及辐照栅偏压对初始阈值电压漂移的影响,并比较了在给定实验条件下NMOSFET和PMOSFET脉冲总剂量效应与60Coγ稳态总剂量效应之间的损伤差异,运用复合模型、氧化物陷阱电荷的隧道退火以及界面态建立的两阶段模型对实验结果进行了分析。The time-dependent radiation effect experiment of pulsed total dose in some CMOS devices was carried out following Qiangguang-Ⅰ accelerator irradiations. These studies were as follows: the time dependence of threshold voltage shift after short pulse ; variation of initial threshold voltage shift for different gate bias during irradiation; the differences of transient and 60Co γ steady total dose effect in NMOSFET and PMOSFET. The experiment results were analysed using recombination model,the tunneling annealing model of oxide trapped charges and the two-stage model of interface states buildup.

关 键 词：CMOS器件 阈值电压漂移 总剂量效应 NMOSFET PMOSFET 陷阱电荷 界面态 ^60CO 损伤 辐照 

分 类 号：TL503[核科学技术—核技术及应用] TN386[电子电信—物理电子学]