旁栅效应对GaAs MESFET数字IC设计的影响  

Influence of Sidegating Effect on Designing GaAs MESFET Digital IC

作　　者：张有涛[1] 夏冠群[1] 李拂晓[2] 高建峰[2] 杨乃彬[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2005年第4期821-825,共5页半导体学报（英文版）

摘　　要：研究了不同旁栅电极结构、不同旁栅电极取向对旁栅阈值特性的影响,并研究了旁栅阈值的光敏特性.结果表明:半绝缘衬底中的电子和空穴陷阱是旁栅效应及其光敏特性的主要原因,Ti/Au/Ti布线金属做旁栅电极具有最好的旁栅阈值特性,Au/Ge/Ni/Au欧姆接触和Ti/Pt/Au/Ti栅金属的旁栅阈值特性相似,三者都有明显的光敏特性.上述结果为GaAsMESFET数字集成电路版图设计规则的制定提供了可靠依据.This paper discusses the impact of different sidegating bar material and different orientation on the sidegating threshold voltage.And the light-induced sidegating effect is also analyzed.The electron traps and hole traps play an important role in sidegating effect and light-induced sidegating effect.The interconnect metals Ti/Au/Ti in circuits have the best sidegating property.The ohmic contacts metals Au/Ge/Ni/Au and FET gate metals Ti/Pt/Au/Ti have the same sidegating characteristic.And all the above have an obvious light-induced sidegating effect.The research results provide a reliable reference for making layout designing rules of large scale GaAs MESFET digital IC.

关 键 词：旁栅效应 GAAS MESFET 阈值电压 缺陷陷阱 集成度 

分 类 号：TN402[电子电信—微电子学与固体电子学]