用于GaN生长的生产型MOCVD设备控制系统设计  

Control System Design for Productive Model MOCVD for GaN-based Material Growth

作　　者：宋玲[1] 李学文[1] 廖炼斌[1] 刘亚红[1] 杨基南[1] 

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2005年第6期14-17,共4页Equipment for Electronic Products Manufacturing

基　　金：国家"863"计划新材料领域课题(2002AA311243)

摘　　要：MOCVD法外延生长GaN基材料作为新世纪的核心技术之一受到全世界的高度重视。MOCVD技术涉及面广,控制对象复杂,且对控制对象的精度、重复性、可靠性要求较高。主要介绍了用于GaN基材料生长的生产型MOCVD(2″×6)设备控制系统的组成与特点。设备运行一年来的结果表明,该系统可靠性高、抗干扰性好、运行效果良好。A method for MOCVD epitaxy grow GaN-based material receive the high attention in whole world as one of the key technology of the new century. MOCVD technology involves a wide range of knowledge. It is complicated and high demanded in precision, repeatability and reliability to control elephant. This paper introduces the control system composition and character of productive model MOCVD(2″×6)for GaN-based material growth. The result comes to shows that this system reliability, anti-interference and operation effect are good for one year.

关 键 词：MOCVD PLC GAN 自动控制系统 

分 类 号：TN304.054[电子电信—物理电子学]