GaN的MOCVD生长  

Growth of GaN by MOCVD

作　　者：陆大成[1] 汪度[1] 王晓晖[1] 董建荣[1] 刘祥林[1] 高维滨[1] 李成基[1] 李蕴言[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学开放实验室,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第11期831-834,共4页半导体学报（英文版）

摘　　要：ＧａＮ是重要的蓝光半导体材料．我们以ＴＭＧａ和ＮＨ３为源在（０１１２）α－Ａｌ２Ｏ３衬底上成功的用ＭＯＣＶＤ方法生长了ＧａＮ外延层，研究了ＧａＮ的表面形貌与结晶学、电学和光学特性．ＧａＮ（２１１０）面的双晶回摆曲线衍射峰的最小半高宽已达１６＇．并观测到ＧａＮ所发出的紫外和可见光波段的阴极荧光．Abstract GaN is an important semiconductor material operating in the blue light range.GaN epitaxial layer was successfully achieved by MOCVD with TMGa and NH3 as sources on (0112) α-Al2O3 substrat. The morphorlogical, crystalline, electrical and optical characterizations of the GaN film are investigated. The minimun FWHM of (2110) peak of double crystal X-ray diffracton rocking curve is 16'. Near ultraviolet and visible light are observed by cathodeluminescence.

关 键 词：氮化镓 MOCVD生长 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学]