跨导为325mS/mm的AlGaN/GaNHFET器件  

AlGaN/GaN HFET with Transconductance of over 325mS/mm

作　　者：张志国[1] 杨瑞霞[1] 王勇[2] 冯震[2] 杨克武[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《Journal of Semiconductors》2005年第9期1789-1792,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目(批准号:51327030201)~~

摘　　要：报道了使用国产GaN外延材料(蓝宝石衬底)的AlGaN/GaNHFET器件的制备以及室温下器件的性能.器件栅采用场板结构,其中栅长为0.3μm,场板长为0.37μm,源漏间距为3μm.器件的饱和电流密度为0.572A/mm,最大漏电流密度为0.921A/mm,最大跨导为325mS/mm,由S参数外推出截止频率和最高振荡频率分别为27.9GHz和33.1GHz.Fabrication and characteristics at room temperature of AIGaN/GaN HFET grown on sapphire substrate are reported. The field plate of gate is adopted. The gate length is 0.3μm and the field plate is 0.37μm. These 3μm-distance between source and drain devices exhibit excellent DC characteristics： saturated current density is 0. 572A/mm, the maximal current density is 0.92A/mm,and the maximal transconductance is 325mS/mm. At the same time,the cutoff frequency（fτ ） of 27.9GHz and the maximum frequency of oscillation（fmax）of 33.1GHz are also obtained.

关 键 词：ALGAN/GAN HFET 跨导 直流特性 场板 

分 类 号：TN386[电子电信—物理电子学]