InP系波导和光电探测器单片集成  

Monolithic Integration of Inp Optical Waveguide and Photodetector

作　　者：杨易[1] 陈兴国[1] 程宗权[1] 王惠民[1] 吕章德[1] 蒋惠英[1] 王晨[1] 施惠英[1] 吴学海[1] 朱祖华[1] 胡征[1] 

机构地区：[1]中国科学院上海冶金研究所,浙江大学信电系

出　　处：《Journal of Semiconductors》1996年第1期51-54,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文主要报道ＩｎＰ光波导和ＩｎＧａＡｓ－ＰＩＮ光电探测器的单片集成，包括材料生长、器件工艺、器件测试三个部份．器件的结构和制作方法较为简单，而代表器件性能的主要参数可与国外同类器件相接近，如光波导损耗最小为８．６ｄＢ／ｃｍ，器件正向压降为０．４～０．６Ｖ，反向击穿电压＞４０Ｖ，响应度～０．５Ａ／Ｗ，上升时间＜０．９ｎｓ．Abstract The monolithic integration of InP optical waveguide and InGaAs PIN Photodetectors is reported. It includes three parts as materials growth, device technology and device measurement. The structure and fabrication of this device are rather simple, but the principal parameters representing the performance of this device are closed to the level of foreign devices, such as the minimum of optical waveguide loss is 8. 6dB/cm, foxward voltage drop is 0. 4-- 0. 6V, reverse breakdown voltage>40V, responsibility￣0. 5A/W,rise time<0. 9ns.

关 键 词：磷化铟 光波导 光电探测器 单片集成 

分 类 号：TN252[电子电信—物理电子学] TN215