带有复合掺杂层集电区的InP/InGaAs/InP DHBT直流特性分析  

Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector

作　　者：孙浩[1] 齐鸣[1] 徐安怀[1] 艾立鹍[1] 苏树兵[2] 刘新宇[2] 刘训春[2] 钱鹤[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2006年第8期1431-1435,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2002CB311902)~~

摘　　要：设计了一种新结构InP/InGaAs/InP双异质结双极晶体管(DHBT),在集电区与基区之间插入n+-InP层,以降低集电结的导带势垒尖峰,克服电流阻挡效应.采用基于热场发射和连续性方程的发射透射模型,计算了n+-InP插入层掺杂浓度和厚度对InP/InGaAs/InPDHBT集电结导带有效势垒高度和I-V特性的影响.结果表明,当n+-InP插入层掺杂浓度为3×1019cm-3、厚度为3nm时,可以获得较好的器件特性.采用气态源分子束外延(GSMBE)技术成功地生长出InP/InGaAs/InPDHBT结构材料.器件研制结果表明,所设计的DHBT材料结构能有效降低集电结的导带势垒尖峰,显著改善器件的输出特性.A novel InP/InOaAs/InP double heterojunction bipolar transistor （DHBT） structure is designed,in which a thin heavily doped n^＋-InP layer between the base and the collector is used to eliminate the energy spike at the B-C junction and overcome the electron blocking effect. The dependence of the effective barrier spike at the B-C junction and the I-V characteristics of the DHBT on the thickness and doping density of the n^＋-InP composite collector are analyzed theoretically. The results show that the device performance is optimal when the doping density is 3 × 10^19cm^-3 and the thickness is 3nm for the n^＋-InP composite collector. The InP/InGaAs/InP DHBTs with composite doping collector are grown by gas source molecular beam epitaxy （GSMBE）. The DC characteristics of the devices demonstrate that the InP/InGaAs/InP DHBT designed here effectively eliminates the energy spike at the B-C junction and improves the device performance.

关 键 词：INP/INGAAS 异质结双极晶体管 复合集电区 掺杂 势垒尖峰 

分 类 号：TN322.8[电子电信—物理电子学]