深能级缺陷对半绝缘InP材料电学补偿的影响  

Influence of deep level defects on electrical compensation in semi-insulating InP materials

作　　者：杨俊[1] 赵有文[2] 董志远[2] 邓爱红[1] 苗杉杉[1] 王博[1] 

机构地区：[1]四川大学物理学院应用物理系,成都610065 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2007年第2期1167-1171,共5页Acta Physica Sinica

摘　　要：对铁掺杂和高温退火非掺杂磷化铟制备的两种半绝缘材料的电学补偿和深能级缺陷进行了分析和比较.根据热激电流谱(TSC)测得的深能级缺陷结果,分析了这两种半绝缘InP材料中深能级缺陷对电学补偿的影响.在掺铁半绝缘InP材料中,由于存在高浓度的深能级缺陷参与电学补偿,降低了材料的补偿度和电学性能.相比之下,利用磷化铁气氛下高温退火非掺InP获得的半绝缘材料的深能级缺陷浓度很低,通过扩散掺入晶格的铁成为唯一的深受主补偿中心钉扎费米能级,材料表现出优异的电学性质.在此基础上给出了一个更为广泛的半绝缘InP材料的电学补偿模型.In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating （SI） materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-Inp materials on the electrical compensation has been studied thermally stimulated current spectroscopy （TSC）. Electrical property of the Fedoped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.

关 键 词：INP 半绝缘 深能级 电学补偿 

分 类 号：O471[理学—半导体物理]