注氮、注氟SIMOX/NMOS器件辐射加固性能(英文)  

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

作　　者：王宁娟[1] 刘忠立[1] 李宁[1] 张国强[1] 于芳[1] 郑中山[1] 李国花[1] 

机构地区：[1]中科院半导体所,北京100083

出　　处：《功能材料与器件学报》2007年第5期426-430,共5页Journal of Functional Materials and Devices

摘　　要：本文对注N、注F的SIMOX/NMOSFET器件的抗辐射特性进行了研究,发现两者都能减少埋氧层及其界面的空穴陷阱,对辐射加固有所改善,特别是对大剂量辐射的加固更为明显。总体来说,在此能量下,离子注入剂量越大,加固越好。由于注入的剂量对片子本身的阈值电压有很大影响,所以选择对于器件初始特性影响较小的剂量及能量非常重要。Radiation hardness of SIMOX（separation by implanted oxygen）/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.

关 键 词：SOI MOSFET 辐射加固 离子注入 

分 类 号：TN386.1[电子电信—物理电子学]