重碳掺杂p型GaAsSb的GSMBE生长及其特性  

Heavily Carbon-Doped p-Type GaAsSb Grown by Gas Source Molecular Beam Epitaxy

作　　者：孙浩[1] 齐鸣[1] 徐安怀[1] 艾立鹍[1] 朱福英[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室

出　　处：《Journal of Semiconductors》2007年第11期1765-1768,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:2002CB311902);国家自然科学基金(批准号:60676062)资助项目~~

摘　　要：以四溴化碳(CBr4)作为碳掺杂源,采用气态源分子束外延(GSMBE)技术生长了InP衬底上晶格匹配的重碳掺杂p型GaAsSb材料.通过改变CBr4压力,研究了掺杂浓度在(1～20)×1019cm-3范围内的掺杂特性,得到的最大掺杂浓度为2.025×1020cm-3,相应的空穴迁移率为20.4cm2/(V.s).研究了不同生长温度对掺碳GaAsSb外延层组分、晶格质量和表面粗糙度的影响,结果表明480℃是生长优良晶格质量的最优温度.Heavily carbon doped p-type GaAsSb epi-layers with lattice matched to InP substrate are grown by gas source mo- lecular beam epitaxy （GSMBE） using carbon tetrabromide （CBr4） as the carbon source. The doping characteristics of carbon- doped GaAsSb with a hole concentration of （1-20） × 10^19cm^-3 are investigated. A maximal hole concentration of 2. 025 × 10^20 cm^-3 is obtained with a corresponding mobility of 20.4cm^2/（V · s）. The effects of growth temperature on the epi-layer composition,crystalline quality,and surface roughness are also studied experimentally, and it is found that 480℃ is the opti- mal growth temperature at which high quality carbon-doped p-type GaAsSb epi-layers can be obtained.

关 键 词：异质结双极晶体管 INP GAASSB 碳掺杂 气态源分子束外延 

分 类 号：TN304[电子电信—物理电子学]