GaN基材料及其外延生长技术研究  

Research for GaN-Based Materials and Epitaxy Growth Technologies

作　　者：刘一兵[1,2] 黄新民[1,2] 刘国华[1,2] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082 [2]邵阳职业技术学院机电工程系,湖南邵阳422000

出　　处：《微纳电子技术》2008年第3期153-157,共5页Micronanoelectronic Technology

摘　　要：介绍了GaN基材料的基本特性、三种主要外延生长技术(MOCVD、MBE、HVPE)、衬底材料的选择及缓冲层技术;分析得出目前存在的GaN体单晶技术不完善、外延成本高、衬底缺陷及接触电阻大等主要问题制约了研究的进一步发展;指出今后的研究重点是完善GaN体单晶材料的生长工艺,以利于深入研究GaN的物理特性及有效地解决衬底问题,研究缓冲层的材料、厚度、组分等以提高GaN薄膜质量。The basic properties of GaN-based materials, three mainly epitaxy growth technologies （MOCVD, MBE, HVPE） , substrate materials and buffer layers are introduced. The mainly remaining problems are the faulty GaN bulk crystal technology, high epitaxy cost, low yield rate, more defect, large contact resistance and so on, which influence the research progress deeply. The further research focus is to improve GaN bulk crystal growth method for studying GaN physical properties, to solve substrate problems effectively, to study the material, thickness and composition of buffer layers for improving GaN film quality.

关 键 词：氮化镓 金属有机物化学气相淀积 分子束外延 氢化物气相外延 缓冲层 

分 类 号：TN304.23[电子电信—物理电子学] TN304.055