Si基GaN薄膜的制备方法及结构表征  

Preparation Techniques and Microstructure Characterization of GaN Films Grown on Si Substrates

作　　者：张敬尧[1] 李玉国[1] 崔传文[1] 张月甫[1] 卓博世[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《微纳电子技术》2008年第4期240-244,共5页Micronanoelectronic Technology

摘　　要：分别采用射频磁控溅射、热壁化学气相沉积(CVD)、电泳沉积法制备GaN薄膜。利用扫描电镜(SEM)、荧光光谱仪对样品进行结构、形貌和发光特性的分析比较。射频磁控溅射方法中,把SiC中间层沉淀到Si衬底上,目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。结果证实了SiC中间层提高了GaN薄膜的质量。热壁化学气相沉积法制备GaN晶体膜时,选择H2作反应气体兼载体,有利于GaN膜的形成。电泳沉积法显示所得样品为六方纤锌矿结构的GaN多晶薄膜。结果表明:溅射法制备的GaN薄膜结晶效果好;CVD法制备时GaN薄膜应用范围广;电泳沉积法操作方便、简单易行。GaN films grown on Si substrates were obtained by hot-wall chemical vapor deposition （CVD） , magnetron sputtering and electrophoretic deposition techniques. The microstructure and the optical properties were characterized by scanning electron microscopy （SEM） and photoluminescence （PL） . In order to release the lattice mismatch between substrates and epitaxy layer, thin SiC films as intermediate layers were deposited onto the substrate with magnetron sputtering. The results indicate the positive effect of the intermediate layer on GaN films. Preliminary results suggest that H2 as carrier gas plays an important role at the same temperature during the growth of GaN films with CVD. GaN films on Si substrates were proved to be hexagonal wurtzite by electrophoretic deposition. The results of the comparison tests indicate that the crystallization of GaN films prepared by magnetron sputtering is excellent, the films prepared by CVD may have wide applications, and the electrophoretic deposition has the advantages of easy operation and relatively low cost.

关 键 词：GAN薄膜 SI基 溅射 化学气相沉积 电泳沉积 

分 类 号：TN304.055[电子电信—物理电子学] TN304.23