新型4H-SiC阳极凹槽D-RESURF肖特基二极管研究  

Study on Novel 4H-SiC Anode-Recessed D-RESURF Schottky Barrier Diode

作　　者：叶毅[1] 张金平[1] 罗小蓉[1] 张波[1] 李肇基[1] 蒋辉[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2008年第4期457-460,464,共5页Microelectronics

基　　金：国家安全重大基础研究项目资助(51327010101)

摘　　要：提出了一种新型4H-SiC阳极凹槽D-RESURF肖特基二极管结构。阳极凹槽使器件反偏时横向电场增强,加快漂移区耗尽。同时,利用D-RESURF技术,提高器件击穿电压和正向导通特性;利用二维数值模拟,从耐压的角度,对降场层的厚度、浓度和长度进行优化。结果表明,新结构较之常规单RESURF结构,击穿电压从890 V提高到1672 V,导通电流为80 mA/mm时,压降从4.4 V降低到2.8 V。A novel anode-recessed D-RESURF Schottky barrier diode structure was proposed. In reverse bias, the recessed anode increases lateral electric field, leading to accelerated depletion in drift layer. The breakdown voltage and conduction performance of the device were improved by using RESURF technology. The thickness, concentration and length of the P-layer were optimized from the viewpoint of breakdown voltage. Numerical simulation results showed that, compared with the conventional single-RESURF, the breakdown voltage of the novel device had increased from 890 V to 1672 V, and the forward conduction voltage decreased from 4. 4 V to 2. 8 V for a conduction current of 80 mA/mm.

关 键 词：4H—SiC 肖特基二极管 降低表面电场 击穿电压 

分 类 号：TN311.7[电子电信—物理电子学]