SiC MESFET工艺在片检测技术  

On-Line Testing Technologies for SiC MESFET

作　　者：商庆杰[1] 潘宏菽[1] 陈昊[1] 李亮[1] 杨霏[1] 霍玉柱[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,专用集成电路国家级重点实验室,石家庄050051

出　　处：《半导体技术》2008年第12期1095-1099,共5页Semiconductor Technology

基　　金：国家重点实验室资助项目(9140C060702060C0603)

摘　　要：介绍了SiC MESFET芯片加工工艺中的主要在片检测技术,包括芯片表面情况判定、干法刻蚀的监测、等平面工艺的辅助测试、欧姆接触比接触电阻值的测试以及各种中间测试技术。芯片表面情况判定主要通过显微镜观察表面形貌、原子力显微镜测表面均匀性以及扫描电镜观察形貌以及组分分析。干法刻蚀的监测主要通过台阶仪结合椭偏仪实现,即保证了干法刻蚀按预想的深度刻蚀也验证了材料结构的参数。通过TLM图形测试的比接触电阻值可以确保良好的欧姆接触,减小器件的串联电阻,提高器件的电流处理能力,为实现高功率输出奠定基础。通过台阶仪测量和显微镜观察实现的等平面工艺大大提高了器件的性能,微波功率提高30%左右,增益提高1.5 dB以上,功率附加效率提高接近10%。The testing technologies of SiC MESFET on manufacturing process were presented, including identification chip surface, dry-etching monitoring, aided testing of isoplanar, the test of the specific contact resistance of ohmic contact and other various testing technologies. Chip surface test, uniformity of the chip surface and composition analysis were investigated by microscope, AFM and SEM. Ellipsometer and step height measuring instrument were used for monitoring dry-etching processing ensuring the etch thickness and verifying the parameter of the material. The test of specific contact resistance of ohmic contact by TLM was used to ensure the excellent contact between metal and semiconductor for decreasing the serial resistance of device and increasing the current capability for high power output. It reveals that the device performance is improved greatly, the microwave out power more than 30%, gain is increased more than 1.5 dB and the ηPAE is increased 10% almost.

关 键 词：碳化硅 金属-半导体场效应晶体管 检测 干法刻蚀 比接触电阻率 

分 类 号：TN304.07[电子电信—物理电子学]