电子束光刻在纳米加工及器件制备中的应用  

Electron Beam Lithography Application on the Nanofabrication and Nanodevice

作　　者：陈宝钦[1] 赵珉[1] 吴璇 牛洁斌[1] 刘键[1] 任黎明[1] 王琴[1] 朱效立[1] 徐秋霞[1] 谢常青[1] 刘明[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微纳电子技术》2008年第12期683-688,共6页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划(973)资助项目(2006CB0N0604;2006CB302706;2007CB935302)

摘　　要：电子束光刻技术是推动微米电子学和微纳米加工发展的关键技术,尤其在纳米制造领域中起着不可替代的作用。介绍了中国科学院微电子研究所拥有JEOLJBX5000LS、JBX6300FS纳米电子束光刻系统和电子显微镜系统的电子束光刻技术实验室,利用电子束直写系统所开展的纳米器件和纳米结构制造工艺技术方面的研究。重点阐述了如何利用电子束直写技术实现纳米器件和纳米结构的电子束光刻。针对电子束光刻效率低和电子束光刻邻近效应等问题所采取的措施;采用无宽度线曝光技术和高分辨率、高反差、低灵敏度电子抗蚀剂相结合实现电子束纳米尺度光刻以及采用电子束光刻与X射线曝光相结合的技术实现高高宽比的纳米尺度结构的加工等具体工艺技术问题展开讨论。Electron beam lithography is the key technology in nano-electronics, and especially plays an irreplaceable role in micro-nano-fabrication. The research work of the Institute of Microelee- tronics in Chinese Academy of Sciences is mainly about the fabrication of nano-structures and nano-devices including electronic and optical devices with two sets of electron beam lithography systems, JEOL JBX 5000LS and JBX 6300FS. The nano-lithography is studied by the electron beam direct-writing technology. To overcome the weaknesses of low output and proximity effect in electron beam lithography, malay measures are taken in the fabrication of nano-scale structures including the single-line-exposure, novel resist with high-resolution and high-contrast. And the nano-structure with the high aspect ratio can be made by the combination of electron beam 1 ithography and X-ray lithography. Many other detail processes are also discussed.

关 键 词：电子束光刻 电子束直写 电子束邻近效应校正 纳米制造 纳米器件 纳米结构 

分 类 号：TN305.6[电子电信—物理电子学] TN305.7