Si(111)衬底上GaN外延材料的应力分析  

Stress Analysis of GaN Materials Grown on Si(111) Substrates

作　　者：尹甲运[1] 刘波[1] 张森[1,2] 冯志宏[1] 冯震[1] 蔡树军[1] 

机构地区：[1]专用集成电路国家级重点实验室,石家庄050051 [2]哈尔滨工业大学材料科学与工程学院,哈尔滨150001

出　　处：《微纳电子技术》2008年第12期703-705,711,共4页Micronanoelectronic Technology

摘　　要：对Si(111)衬底上GaN外延材料的应力随着低温AlN插入层数的变化进行了分析研究。通过喇曼散射谱在高频E2(TO)模式下的测试分析发现,随着低温AlN插入层数的增加,GaN材料的E2(TO)峰位逐渐接近体GaN材料的E2(TO)峰位(无应力体GaN材料的E2(TO)峰位为568cm-1),计算得出GaN材料的应力从1.09GPa减小到0.42GPa。同时,使用室温光荧光谱进行了分析验证。结果表明,Si衬底上GaN外延材料受到的是张应力,通过低温AlN插入层技术可以有效降低GaN材料的应力,并且最终实现了表面光亮的厚层无裂纹GaN材料。The stress states of GaN with different numbers of A1N interlayers grown on Si （111） substrates by metal-organic chemical vapor deposition （MOCVD） were investigated. The Raman peak positions in the E2 （TO） -high mode of GaN are approach to that of bulk GaN （568 cm-1） with the increase of low-temperature AlN interlayers. The stress of GaN grown on Si substrates was reduced from 1.09 GPa to 0.42 GPa. The reduction of the stress was also confirmed by the room-temperature photoluminescence. These results indicate that there is a tensile stress in GaN materials grown on Si substrates, the stress can be reduced effectively by using the low-tempera- ture AlN interlayer technique. Then the crack-free thick GaN materials with mirror surfaces were obtained.

关 键 词：氮化镓 AlN插入层 喇曼散射 光荧光谱 应力 SI衬底 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054