利用离子束技术及PECVD制备碳化硅  

Preparation of SiC thin films by ion beam technology and PECVD

作　　者：陈长清[1,2] 任琮欣[1,2] 杨立新 严金龙[1,2] 郑志宏[1,2] 周祖尧[1,2] 陈平[1,2] 柳襄怀 陈学良[1,2] 

机构地区：[1]中国科学院上海冶金研究所微电子学分部 [2]中国科学院上海冶金研究所离子束实验室

出　　处：《核技术》1998年第9期519-524,共6页Nuclear Techniques

摘　　要：阐述利用离子注入、离子束增强沉积、反应离子束溅射及反应离子束辅助沉积等方法制备碳化硅薄膜的实验结果，并报道利用等离子体增强化学气相沉积技术制备可光致发光的非晶态α－ＳｉＣ：Ｈ薄膜的工作。The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED i. presented and the enhanced deposition of Xe. is found superior to that of Ar. . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pcH4/PAr. Finally given is a brief introduction to a high quality a - SiCiH film which is prepared by PE CVD and can exhibit green luminescence at room temperature.

关 键 词：离子束增强沉积 晶态 碳化硅 PECVD 

分 类 号：TN304.24[电子电信—物理电子学] TN304.055