IC中多余物缺陷对信号串扰的定量研究  

Quantitative Studies Redundant Object Defect in IC for Signal Crosstalk

作　　者：周文[1] 刘红侠[1] 匡潜玮[1] 高博[1] 曹磊[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《电子与信息学报》2010年第1期210-213,共4页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(60206006);教育部科技创新工程重大项目培育资金(708083);教育部新世纪优秀人才计划(NCET-05-0851);西安应用材料创新基金(XA-AM-200701)资助课题

摘　　要：该文研究了铜互连线中的多余物缺陷对两根相邻的互连线间信号的串扰,提出了互连线之间的多余物缺陷和互连线之间的互容、互感模型,用于定量的计算缺陷对串扰的影响。提出了把缺陷部分单独看作一段RLC电路模型,通过提出的模型研究了不同互连线参数条件下的信号串扰,主要研究了铜互连线的远端串扰和近端串扰,论文最后提出了一些改进串扰的建议。实验结果证明该文提出的信号串扰模型可用于实际的电路设计中,能够对设计人员设计满足串扰要求的电路提供指导。This paper studies the signal crosstalk due to redundant object defect of adjacent copper interconnects. The models of coupling capacitance and mutual inductance between redundant defect and interconnects are presented, and it can be used to quantitatively calculate the influence of defect on crosstalk. In the experiment model, defect is regard as a separate section RLC circuit. Signal crosstalk is studied under the conditions that are various parameters of interconnect using the model. The far crosstalk and near crosstalk of the copper interconnects are studied. Finally, some advice improved signal crosstalk is put forward. Experiment results show that the presented model can be used actual circuit design, and can guide designer to design circuit for satisfying crosstalk requirements.

关 键 词：集成电路 多余物缺陷 信号串扰 铜互连 可靠性 

分 类 号：TN406[电子电信—微电子学与固体电子学]