双层铝互连倒梯形通孔刻蚀技术研究  

Study on Etching of Inverse Trapezoid Via for Double Aluminum Interconnects

作　　者：唐昭焕[1] 王大平[2] 梁涛[2] 李荣强[2] 王斌[2] 任芳[2] 崔伟[1] 谭开洲[1] 

机构地区：[1]模拟集成电路重点实验室,重庆400060 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2012年第2期266-269,共4页Microelectronics

基　　金：国家重大基础研究基金资助项目(Y61398)

摘　　要：针对双层布线中二铝在通孔处台阶覆盖率低的问题,通过优化光刻胶膜的厚度、硬烘温度,以及调整刻蚀气体流量、腔室压力及极板功率,开发出坡度为62.5°的倒梯形通孔;二铝在通孔处的台阶覆盖率大于90%。将该技术用于D/A转换器的研制,成品率得到明显提高。In order to improve the low step coverage of the second Al metallization on the via,thickness and bake temperature of the photo-resist were optimized,and flux of etch gases,chamber pressure and RF power were adjusted to develop inverse trapezoid via with 62.5° gradient.Using this optimized process,step coverage of the second Al metallization on the via was more than 90%.The proposed process was used to fabricate D/A converters,and the yield was improved remarkably.

关 键 词：半导体工艺 刻蚀 铝互连 双层布线 倒梯形通孔 

分 类 号：TN405[电子电信—微电子学与固体电子学]