退火温度和退火气氛对Ni/Au与p-GaN之间欧姆接触性能的影响  

Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN

作　　者：李晓静[1] 赵德刚[1] 何晓光[1] 吴亮亮[1] 李亮[1] 杨静[1] 乐伶聪[1] 陈平[1] 刘宗顺[1] 江德生[1] 

机构地区：[1]中国科学院半导体所,集成光电子学国家重点实验室,北京100083

出　　处：《物理学报》2013年第20期386-390,共5页Acta Physica Sinica

基　　金：国家杰出青年科学基金(批准号:60925017);国家自然科学基金(批准号:10990100,61176126);清华大学信息科学与技术国家实验室(筹)学科交叉基金资助的课题~~

摘　　要：研究了不同退火温度和气氛对Ni/Au与p-GaN之间欧姆接触性能的影响.采用圆形传输线模型方法得到不同退火温度和不同退火气氛下的比接触电阻率.结果表明,较适宜的退火温度为500 C左右,退火温度太高或太低都会导致比接触电阻率的增大;较适宜的退火气氛为适量含氧的氮气气氛,且氧气含量对比接触电阻率大小的影响并不显著.经过对退火条件的优化,得到的比接触电阻率可达7.65×10 4·cm2.In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 ？C. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65 × 10？4？·cm2 at the best annealing temperature and atmosphere.

关 键 词：P-GAN 欧姆接触 圆形传输线模型 快速热退火 

分 类 号：TG156.2[金属学及工艺—热处理] TN304[金属学及工艺—金属学]