光加热低压金属有机化学气相淀积生长AlGaN  

Light Radiation Heating Low Pressure Metal-organic Chemical Vapor Deposition of AlGaN

作　　者：周玉刚[1] 李卫平[1] 沈波[1] 陈鹏[1] 陈志忠[1] 臧岚[1] 张荣[1] 顾书林[1] 施毅[1] 郑有翀 

机构地区：[1]南京大学物理系,南京210093

出　　处：《高技术通讯》2000年第8期34-36,共3页Chinese High Technology Letters

基　　金：863计划;国家自然科学基金资助项目

摘　　要：采用光加热低压金属有机化学气相淀积方法成功地制备出高质量的、组分均匀的AlGaN外延层。结果表明 ,铝和镓的并入效率基本相等 ,这有别于其他研究报道。此外 ,建立了铝相对镓的并入效率与气相预反应之间的关系模型 ,它表明 ,光加热对预反应有较大的影响。结合GaN的生长可以看出 ,光加热有利于抑制预反应 ,从而有利于提高样品质量和铝组分的均匀性。AlGaN epilayers is successfully grown using light radiation heating metalorganic chemical vapor deposition (MOCVD) X ray diffraction spectrum shows that the film is of high crystalline quality Photoluminescence excitation (PLE) spectra show an abrupt absorption edge of AlGaN layer, which indicates that the sample is of high optical quality and uniformity The results show that the incorporation efficiency of Al is as high as that of Ga, which is beneficial to improve the uniformity of Al composition in AlGaN This is very different from the results reported by other groups. A model of the influence of the parasitic reaction on the Al composition in AlGaN is developed based on previous work As is discussed, light radiation influence the parasitic reaction between TMⅢ and NH 3 Most possibly, it depresses the parasitic reaction, thus improves the incorporation efficiency of Al into the AlGaN film during growth, and improves the quality and uniformity of AlGaN layers

关 键 词：ALGAN GAN 金属有机化学气相淀积 气相寄生反应 光加热 

分 类 号：TN304[电子电信—物理电子学]