高k栅介质InGaAs MOSFET结构的设计与仿真  

Structural Design and Simulation of InGaAs MOSFETs with High-k Gate Dielectrics

作　　者：朱述炎[1] 叶青[1] 汪礼胜[1,2] 徐静平[1] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074 [2]武汉理工大学理学院物理科学与技术系,武汉430070

出　　处：《微电子学》2014年第2期237-240,244,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61176100)

摘　　要：利用半导体仿真工具Silvaco TCAD,研究了高k栅介质InGaAs MOSFET的三种结构:缓冲层结构、侧墙结构和基本结构。通过对三种结构MOSFET的阈值电压、亚阈值摆幅以及漏源电流进行比较分析,得出缓冲层结构InGaAs MOSFET具有最佳的电学特性,侧墙结构的MOSFET次之。进一步分析发现,当缓冲层结构InGaAs MOSFET的沟道厚度大于80nm时,可获得稳定的电性能。Three structures,i.e.buffer structure,sidewall structure and basic structure,of lnGaAs MOSFETs with high-k gate dielectrics were investigated using Silvaco TCAD simulation tools.The three structures were analyzed and compared with regard to their threshold voltages,sub-threshold swings and drain-source currents.It has been demonstrated that the buffer structure has the best electrical properties,followed by the sidewall structure.Further analysis showed that,for lnGaAs MOSFETs with buffer structure,the channel thickness must be larger than 80nm to obtain stable electrical performance,such as threshold voltage.

关 键 词：MOSFET INGAAS 高K栅介质 

分 类 号：TN386.1[电子电信—物理电子学]