在铝诱导下非晶硅薄膜低温快速晶化研究  

Aluminum-induced rapid crystallization of amorphous siliconfilm at low temperature

作　　者：梁厚蕴[1] 林揆训[1] 梁淑霞[2] 周甫方[2] 

机构地区：[1]汕头大学科学院材料所,汕头515063 [2]汕头大学理学院,汕头515063

出　　处：《汕头大学学报（自然科学版）》2001年第1期35-38,共4页Journal of Shantou University：Natural Science Edition

摘　　要：在镀铝 (0 .5～ 4μm)的玻璃基底上用射频辉光放电化学气相沉积法沉积 1～ 4μm厚的α- Si薄膜 (基底沉积温度为 30 0℃ ,沉积速率为 1 .0μm/h) ,然后样品在共熔温度下、 N2 气保护中热退火 ,可使其快速晶化成多晶硅薄膜 .结果表明 :在铝薄膜的诱导下 α- Si薄膜在温度 550℃附近退火 5min即可达到晶化 ,X-射线衍射分析显示样品退火 30 min形成的硅层基本全部晶化 ,且具有良好的晶化质量 .In this paper is reported our achievements in rapidly producing polycrystalline silicon(poly-Si)in which 1-4μ m-thick a-Si film was deposited on aluminum-plated glass substrates by using the radio-frequency chemical vapor phase deposition method(at a deposition temperature of 300℃ with a deposition rate of 1 0 μ m/h),followed by rapid thermal annealing under N 2 gas protection at eutectic temperature.Results obtained show that crystallization induced by aluminum interface layer begins after annealing for 5 minutes at a temperature of 550℃.X-ray diffractometer analysis shows that the poly-Si layer formed at a annealing temperature of 550℃ for 5 minutes is basically in complete crystallization with good quality in 30 min.

关 键 词：快速热退火 铝诱导晶化 太阳能电池 非晶硅薄膜 多晶硅薄膜 晶化温度 退火温度 

分 类 号：TM914.42[电气工程—电力电子与电力传动] O794[理学—晶体学]