蓝宝石衬底上异质外延生长碳化硅薄膜的研究  

XRD and SIMS analysis of single crystal SiC films grown on sapphire

作　　者：王剑屏[1] 郝跃[1] 彭军[1] 朱作云[1] 张永华[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2002年第8期1793-1797,共5页Acta Physica Sinica

摘　　要：报道了在蓝宝石 (α Al2 O3)衬底上采用atmosphericpressurechemicalvapor(APCVD)技术异质外延碳化硅薄膜材料的研究 .通过引入Ⅲ Ⅴ族氮化物为中间的缓冲层 ,在C(0 0 0 1)蓝宝石上成功地生长出SiC薄膜 ,经过四晶衍射分析 ,分别在 35 4 9°和 75 0 2°发现了 6H SiC(0 0 0 6 )面和 (0 0 0 12 )晶面族的对称衍射峰 ,显示SiC薄膜的晶体取向与(0 0 0 1)面的衬底是相同的 .扫描电子显微镜 (SEM)的观察显示薄膜表面连续、光滑 ,不要利用二次离子质谱仪(SIMS)方法对生长膜层在纵向剖面的元素结构进行了分析 。Single\|crystal silicon carbide film grown on a C face(0001) sapphire by atmospheric pressure chemical vapor deposition(APCVD) is discussed. Between the substrate and SiC film, a Ⅲ Ⅴ nitride buffer layer was introduced to help epi layer successfully adhering to the substrate. Optical microscope and SEM were used to study surface morphology of the SiC films. It shows that the SiC films are uniform and continuous. By means of multiple crystal (XRD) analysis, the crystalline structure of the films was examined, which shows diffraction peaks at 35 05°and 75 02°. Further analysis indicates that these peaks are symmetrical peaks which come from 6H SiC(0006) face and (00012)face. This fact indicates that the SiC film may be single crystal. Beside 6H polytypes, the diffraction from 3C SiC(002) face was also found, it is estimated that the proportion of 3C polytype is less than 10%. SIMS was used to reveal the element depth profile of SiC/AlN/Al 2O 3 structure. It shows that a high quality buffer layer is key to carry out hetero epitaxy of Silicon carbide films.

关 键 词：蓝宝石衬底 异质外延生长 碳化硅薄膜 化学汽相淀积 

分 类 号：TN304.055[电子电信—物理电子学]