蓝宝石衬底CMP中温度控制对速率的影响  

Influence of temperature control on removal rate for sapphire substrate CMP

作　　者：牛新环[1] 黄雅欢 王嘉欣[1] 王建超[1] 

机构地区：[1]河北工业大学电子信息工程学院天津市电子材料与器件重点实验室,天津300130

出　　处：《河北工业大学学报》2015年第5期19-22,共4页Journal of Hebei University of Technology

基　　金：河北省自然科学基金(E2013202247);国家级大学生创新创业训练计划项目(201310080022)

摘　　要：化学机械抛光(CMP)是固体物质表面超精密加工最重要的方法之一,温度是影响CMP过程中化学反应快慢及材料去除速率的重要因素之一.本文重点研究了蓝宝石衬底CMP过程中抛光前期温度上升时间对最终抛光效果的影响,并采用原子力显微镜观察表面粗糙度,通过测厚仪测量去除厚度.实验结果表明,通过小流量快启动方式,减少温度上升时间,可以有效提高抛光去除速率,改善去除速率均匀性.在工作压力为0.1 MPa时,抛光开始15 min后使温度提升到35℃,抛光速率为4.07 m/h,片内速率非均匀性为4.73%,粗糙度为0.174 nm.Chemical mechanical polishing （CMP） is one of the most important methods for solid surface ultra-precision machining, and the polishing temperature is one of the key factors influencing the chemical reaction rate and material removal rate during CMP process. In this paper, the effect of the temperature rising time in the earlier polishing stage on the final polishing quality was studied. The surface roughness was measured by atomic force microscope （AFM） and the thickness was measured by thickness tester. The experiment results indicated that the removal rate was increased and the within-wafer uniformity was effectively improved by using the small flow and quick- start method to reduce the temperature rising time. Under the pressure of 0.1 MPa and the temperature going up to 35℃ within 15 minutes, the polishing removal rate was 4.07 μm/h, the within-wafer non-uniformity was 4.73%, and the roughness was 0.174 nm.

关 键 词：蓝宝石衬底 化学机械抛光 温度控制 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]