基站应用高线性高效率50 V GaN HEMT  

High Linearity and High Efficiency 50 V GaN HEMT for Base Station Application

作　　者：陈韬[1,2] 陈志勇 蒋浩[1] 魏星[1] 杨兴[1] 陈新宇 李忠辉[1] 陈堂胜[1] 

机构地区：[1]微波毫米波单片集成和模块电路重点实验室,南京电子器件研究所,南京210016 [2]中电科技德清华莹电子有限公司,浙江德清313200 [3]南京国博电子有限公司,南京211153

出　　处：《固体电子学研究与进展》2017年第3期155-158,共4页Research & Progress of SSE

摘　　要：报道了针对移动通信基站应用的GaN HEMT的研制。通过采用NiAu势垒,降低器件栅极漏电,从而提高器件击穿电压。同时通过优化V型栅,降低了峰值电场,提高器件击穿电压30%以上。GaN HEMT器件设计采用双场板结构,工艺采用0.5μm栅长,工作电压50V,在2.3~2.7GHz带内峰值输出功率280 W,功率附加效率>64%,线性度-30dBc@PAR=5dB,器件抗失配比(VSWR)至5∶1,器件性能可以满足未来基站多频段多载波应用需要。可靠性试验结果表明,研制的器件在150℃下平均工作寿命(MTTF)>4×10~6 h,满足系统应用需要。In this paper,a GaN HEMT for base station RF power application has been presented.The gate leakage current of the GaN HEMT is greatly reduced by NiAu schottky gate contact,which improves device breakdown voltage.Combining the optimization of V gate,the breakdown voltage increases by more than 30%.Based on the design of double field plate,50 V GaN HEMT power device with 0.5μm gate length for base station application was fabricated.Within the bandwidth between 2.3GHz and 2.7GHz,the GaN HEMT exhibits a peak output power of 280 W,a PAE of 64%,and a distinguished linearity value of -30dBc@PAR=5dB.The device is stable under RF mismatch test with VSWR 5：1.The MTTF of the device is longer than 4×10~6hours at 150℃junction temperature.

关 键 词：氮化镓 微波功率管 场板 

分 类 号：TN323[电子电信—物理电子学] TN722