离子注入和固相外延制备Si_(1-x-y)Ge_xC_y半导体薄膜  

Preparation of Si_(1-x-y)Ge_xC_y semiconductor films on Si by ion implantation and solid phase epitaxy

作　　者：刘雪芹[1] 王印月[1] 甄聪棉[1] 张静[1] 杨映虎[1] 郭永平[1] 

机构地区：[1]兰州大学物理系,兰州730000

出　　处：《物理学报》2002年第10期2340-2343,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :698760 17)资助课题~~

摘　　要：用等离子体增强化学气相淀积 (PECVD)生长了 2 0 0nm的SiGe薄膜 ,然后将C离子注入SiGe层 ,经两步热退火处理制备了Si1 -x -yGexCy 三元合金半导体薄膜 .应用卢瑟福背散射 (RBS) ,傅里叶变换红外光谱 (FTIR)和高分辨率x射线衍射 (HRXRD)研究了薄膜的结构和外延特性 .发现C原子基本处于替代位置 。Si1-x-yGexCy ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequest solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (MR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer.

关 键 词：半导体薄膜 Si1-x-yGexCy薄膜 离子注入 固相外延 制备工艺 PECVD 硅锗碳三元合金薄膜 

分 类 号：TN304.05[电子电信—物理电子学]