功率MOSFET抗单粒子加固技术研究  

Investigation on radiation-hardened technology of single event effect for power MOSFETs

作　　者：陈宝忠[1,2] 宋坤 王英民 刘存生 王小荷[1,2] 赵辉 辛维平[1,2] 杨丽侠 邢鸿雁 王晨杰 CHEN Baozhong;SONG Kun;WANG Yingmin;LIU Cunsheng;WANG Xiaohe;ZHAO Hui;XIN Weiping;YANG Lixia;XING Hongyan;WANG Chenjie(Xi’an Microelectronic Technology Institute,Xi’an 700048,China;Laboratory of Science and Technology on Radiation-hardened Integrated Circuits,Xi’an 700048,China)

机构地区：[1]西安微电子技术研究所,西安700048 [2]抗辐射集成电路技术实验室,西安700048

出　　处：《集成电路与嵌入式系统》2024年第3期19-22,共4页INTEGRATED CIRCUITS AND EMBEDDED SYSTEMS

摘　　要：针对功率MOSFET的单粒子效应(SEE)开展了工艺加固技术研究,在单粒子烧毁(SEB)加固方面采用优化的体区掺杂工艺,有效降低了寄生双极晶体管(BJT)增益,抑制了单粒子辐照下的电流正反馈机制。在单粒子栅穿(SEGR)加固方面,通过形成缓变掺杂的外延缓冲层来降低纵向电场梯度,减弱了非平衡载流子在栅敏感区的累积,并开发了台阶栅介质结构提升栅敏感区的临界场强。实验结果表明,经过加固的功率MOSFET在满额漏源工作电压和15 V栅源负偏电压的偏置条件下,单粒子烧毁和栅穿LET值大于75 MeV·cm^(2)/mg。在相同辐照条件下,加固器件的栅源负偏电压达到15~17 V,较加固前的7~10 V有显著提升。An investigation on radiation-hardened technology of single event effect(SEE)for power MOSFETs is described in the paper.In order to decrease the gain of the parasitic bipolar junction transistor(BJT),an optimized reversed-body implant process is utilized.Mean-while,a variable-doping buffer of epitaxy is designed to reduce the gradient of vertical electric-field,leading to a decreased accumulation of carriers nearly the sensitive gate area.Results show under rated Vds and 15 V negative Vgs bias,the single event burnout(SEB)and sin-gle event gate rupture(SEGR)LET of radiation-hardened MOSFETs is above 75 MeV·cm^(2)/mg.Under the same radiation condition,the negative gate-source bias of radiation-hardened MOSFETs reaches to 15~17 V.There is an obvious increase comparing to the un-hardened MOSFETs of 7~10 V.

关 键 词：功率MOSFET 单粒子效应 抗辐射加固 单粒子烧毁 单粒子栅穿 

分 类 号：TN386.1[电子电信—物理电子学] TN306TN323.4